參數(shù)資料
型號(hào): DT28F016SV-080
廠商: INTEL CORP
元件分類: DRAM
英文描述: 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
中文描述: 1M X 16 FLASH 5V PROM, 80 ns, PDSO56
封裝: 23.70 X 16 MM, SSOP-56
文件頁(yè)數(shù): 3/63頁(yè)
文件大?。?/td> 635K
代理商: DT28F016SV-080
E
28F016SV FlashFile MEMORY
3
CONTENTS
PAGE
PAGE
1.0 INTRODUCTION .............................................7
1.1 Enhanced Features......................................7
1.2 Product Overview.........................................7
2.0 DEVICE PINOUT.............................................9
2.1 Lead Descriptions ......................................11
3.0 MEMORY MAPS ...........................................15
3.1 Extended Status Registers Memory Map ...16
4.0 BUS OPERATIONS, COMMANDS AND
STATUS REGISTER DEFINITIONS................17
4.1 Bus Operations for Word-Wide Mode
(BYTE# = V
IH
)..............................................17
4.2 Bus Operations for Byte-Wide Mode
(BYTE# = V
IL
)...............................................17
4.3 28F008SA—Compatible Mode Command
Bus Definitions.............................................18
4.4 28F016SV—Performance Enhancement
Command Bus Definitions............................19
4.5 Compatible Status Register........................21
4.6 Global Status Register ...............................22
4.7 Block Status Register.................................23
4.8 Device Configuration Code.........................24
5.0 ELECTRICAL SPECIFICATIONS..................25
5.1 Absolute Maximum Ratings........................25
5.2 Capacitance...............................................26
5.3 DC Characteristics (V
CC
= 3.3V ± 0.3V) .....29
5.4 DC Characteristics (V
CC
= 5V ± 0.5V)
5V ± 0.25V)..................................................33
5.5 Timing Nomenclature .................................37
5.6 AC Characteristics—Read Only Operations38
5.7 Power-Up and Reset Timings.....................43
5.8 AC Characteristics for WE#—Controlled
Command Write Operations .........................44
5.9 AC Characteristics for CE#—Controlled
Command Write Operations)........................49
5.10 AC Characteristics for WE#—Controlled
Page Buffer Program Operations..................54
5.11 AC Characteristics for CE#—Controlled
Page Buffer Program Operations..................56
5.12 Erase and Word/Byte Program
Performance.................................................58
6.0 MECHANICAL SPECIFICATIONS.................60
APPENDIX A: Device Nomenclature and
Ordering Information .....................................61
APPENDIX B: Ordering Information .................63
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