分離式半導體產(chǎn)品 IPW65R420CFD品牌、價格、PDF參數(shù)

IPW65R420CFD • 品牌、價格
元器件型號 廠商 描述 數(shù)量 價格
IPW65R420CFD Infineon Technologies MOSFET N-CH 650V 8.7A TO247 0 1:$4.09000
10:$3.65300
100:$2.99550
250:$2.70324
500:$2.42560
1,000:$2.04568
2,500:$1.94340
5,000:$1.86303
10,000:$1.81189
BSC109N10NS3 G Infineon Technologies MOSFET N-CH 100V 63A 8TDSON 0 1:$2.16000
10:$1.85000
25:$1.66440
100:$1.51040
250:$1.35632
500:$1.17136
1,000:$0.98640
2,500:$0.89392
BSC109N10NS3 G Infineon Technologies MOSFET N-CH 100V 63A 8TDSON 0 1:$2.16000
10:$1.85000
25:$1.66440
100:$1.51040
250:$1.35632
500:$1.17136
1,000:$0.98640
2,500:$0.89392
IPB65R190CFD Infineon Technologies MOSFET N-CH 650V 17.5A TO263 0 1,000:$2.60316
2,000:$2.47300
5,000:$2.37074
10,000:$2.30566
25,000:$2.23128
IPD90N04S4-02 Infineon Technologies MOSFET N-CH 40V 90A TO252-3-313 0 2,500:$0.80068
IPW65R420CFD • PDF參數(shù)
類別: 分離式半導體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點: 標準
漏極至源極電壓(Vdss): 650V
電流 - 連續(xù)漏極(Id) @ 25° C: 8.7A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C: 420 毫歐 @ 3.4A，10V
Id 時的 Vgs(th)（最大）: 4.5V @ 340µA
閘電荷(Qg) @ Vgs: 32nC @ 10V
輸入電容 (Ciss) @ Vds: 870pF @ 100V
功率 - 最大: 83.3W
安裝類型: 通孔
封裝/外殼: TO-247-3
供應商設備封裝: PG-TO247-3
包裝: 管件