| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SI7403BDN-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V 1212-8 PPAK | 0 | 3,000:$0.35000 6,000:$0.33250 15,000:$0.31875 30,000:$0.31000 75,000:$0.30000 |
| SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 1:$2.98000 25:$2.29520 100:$2.08250 250:$1.87000 500:$1.61500 1,000:$1.36000 |
| SI4056DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 75 | 1:$1.01000 25:$0.78200 100:$0.69000 250:$0.59800 500:$0.50600 1,000:$0.40250 |
| SI4056DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 75 | 1:$1.01000 25:$0.78200 100:$0.69000 250:$0.59800 500:$0.50600 1,000:$0.40250 |
| SI4056DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 100V D-S 8SOIC | 0 | 2,500:$0.33350 5,000:$0.31050 12,500:$0.29900 25,000:$0.28750 62,500:$0.28290 125,000:$0.27600 |
| SIE848DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 1:$2.98000 25:$2.29520 100:$2.08250 250:$1.87000 500:$1.61500 1,000:$1.36000 |
| SQD50N06-07L-GE3 | Vishay Siliconix | MOSFET N-CH 60V 50A TO252 | 0 | 2,000:$1.72900 |
| SI4886DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 9.5A 8-SOIC | 0 | 2,500:$1.71570 |
| 類別: | 分離式半導體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 20V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 74 毫歐 @ 5.1A，4.5V |
| Id 時的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 15nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 430pF @ 10V |
| 功率 - 最大: | 9.6W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? 1212-8 |
| 供應商設備封裝: | PowerPAK? 1212-8 |
| 包裝: | 帶卷 (TR) |