| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI1431DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1.7A SOT363 | 0 | 3,000:$0.21750 |
| SI5461EDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.83700 |
| SI5459DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.22475 |
| SI3434DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 4.6A 6-TSOP | 0 | 3,000:$0.25085 |
| SI4390DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8.5A 8SOIC | 0 | 2,500:$1.25550 |
| SI8406DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V D-S MICROFOOT | 0 | 3,000:$0.21700 6,000:$0.20300 15,000:$0.18900 30,000:$0.17850 75,000:$0.17500 150,000:$0.16800 |
| IRFBC30ASTRLPBF | Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | 0 | 800:$0.83003 |
| SQ2308ES-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO236 | 0 | 3,000:$0.21700 |
| SI4368DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC | 0 | 2,500:$0.82485 |
| SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
| IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
| SI2333DS-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V SOT23-3 | 0 | 3,000:$0.22475 |
| SQD25N06-22L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V 25A TO252 | 0 | 2,000:$0.89100 |
| SIE862DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V POLARPAK | 0 | 3,000:$0.89100 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3426EEV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 7A 6TSOP | 38 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| SQ3419EEV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 40V 7.4A 6TSOP | 0 | 1:$0.79000 25:$0.55440 100:$0.47520 250:$0.41040 500:$0.35280 1,000:$0.27360 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 30V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 1.7A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 200 毫歐 @ 2A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 3V @ 100µA |
| 閘電荷(Qg) @ Vgs: | 4nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | - |
| 功率 - 最大: | 950mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSSOP，SC-88，SOT-363 |
| 供應(yīng)商設(shè)備封裝: | SC-70-6 |
| 包裝: | 帶卷 (TR) |