分離式半導體產品 SQ2319ES-T1-GE3品牌、價格、PDF參數

SQ2319ES-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數量 價格
SQ2319ES-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 40V TO-236 0 3,000:$0.30450
SI4880DY-T1-GE3 Vishay Siliconix MOSFET N-CH 30V 13A 8-SOIC 0 2,500:$1.10700
SIB411DK-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V PPAK SC75-6L 0 3,000:$0.30450
SI7804DN-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 1212-8 0 3,000:$0.30450
SI4493DY-T1-GE3 Vishay Siliconix MOSFET P-CH 20V 10A 8SOIC 0 2,500:$1.10700
SI4401DY-T1-GE3 Vishay Siliconix MOSFET P-CH 40V 8-SOIC 0 2,500:$1.09755
SIR882ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A POWERPAK 0 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIR882ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A POWERPAK 0 1:$2.84000
25:$2.18720
100:$1.98450
250:$1.78200
500:$1.53900
1,000:$1.29600
SIR882ADP-T1-GE3 Vishay Siliconix MOSFET N-CH 100V 60A POWERPAK 0 3,000:$1.09350
6,000:$1.05300
15,000:$1.01250
30,000:$0.99225
75,000:$0.97200
SIE882DF-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 25V POLARPAK 0 3,000:$1.09350
IRL640STRRPBF Vishay Siliconix MOSFET N-CH 200V 17A D2PAK 0 800:$1.09305
SQ2319ES-T1-GE3 • PDF參數
類別: 分離式半導體產品
FET 型: MOSFET P 通道,金屬氧化物
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 40V
電流 - 連續(xù)漏極(Id) @ 25° C: 4.6A
開態(tài)Rds(最大)@ Id, Vgs @ 25° C: 75 毫歐 @ 3A,10V
Id 時的 Vgs(th)(最大): 2.5V @ 250µA
閘電荷(Qg) @ Vgs: 16nC @ 10V
輸入電容 (Ciss) @ Vds: 620pF @ 25V
功率 - 最大: 3W
安裝類型: *
封裝/外殼: TO-236-3,SC-59,SOT-23-3
供應商設備封裝: SOT-23-3(TO-236)
包裝: 帶卷 (TR)