參數(shù)資料
型號(hào)： E28F160S5-70
廠商： INTEL CORP
元件分類： PROM
英文描述： 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述： 2M X 8 FLASH 5V PROM, 70 ns, PDSO56
封裝： 14 X 20 MM, TSOP-56
文件頁(yè)數(shù)： 1/50頁(yè)
文件大?。?/td> 1220K
代理商： E28F160S5-70
E
ADVANCE INFORMATION
June 1997
Order Number: 290609-001
n
Two 32-Byte Write Buffers
2
μ
s per Byte Effective
Programming Time
n
Operating Voltage
5V V
CC
5V V
PP
n
70 ns Read Access Time (16 Mbit)
90 ns Read Access Time (32 Mbit)
n
High-Density Symmetrically-Blocked
Architecture
32 64-Kbyte Erase Blocks (16 Mbit)
64 64-Kbyte Erase Blocks (32 Mbit)
n
System Performance Enhancements
STS Status Output
n
Industry-Standard Packaging
SSOP and TSOP (16 Mbit)
SSOP (32 Mbit)
n
Cross-Compatible Command Support
Intel Standard Command Set
Common Flash Interface (CFI)
Scaleable Command Set (SCS)
n
100,000 Block Erase Cycles
n
Enhanced Data Protection Features
Absolute Protection with V
PP
= GND
Flexible Block Locking
Block Erase/Program Lockout
during Power Transitions
n
Configurable x8 or x16 I/O
n
Automation Suspend Options
Program Suspend to Read
Block Erase Suspend to Program
Block Erase Suspend to Read
n
ETOX V Nonvolatile Flash
Technology
Intel’s Word-Wide FlashFile memory family provides high-density, low-cost, nonvolatile, read/write storage
solutions for a wide range of applications. The word-wide memories are available at various densities in the
same package type. Their symmetrically-blocked architecture, voltage, and extended cycling provide highly
flexible components suitable for resident flash arrays, SIMMs, and memory cards. Enhanced suspend
capabilities provide an ideal solution for code or data storage applications. For secure code storage
applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM,
the word-wide memories offer three levels of protection: absolute protection with V
PP
at GND, selective block
locking, and program/erase lockout during power transitions. These alternatives give designers ultimate
control of their code security needs.
This family of products is manufactured on Intel’s 0.4
μ
m ETOX V process technology. It comes in the
industry-standard 56-lead SSOP. In addition, the 16-Mb device is available in the industry-standard 56-lead
TSOP package.
WORD-WIDE
FlashFile MEMORY FAMILY
28F160S5, 28F320S5
Includes Extended Temperature Specifications
相關(guān)PDF資料
PDF描述
E28F320S5-90 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
E28F200CVB60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E28F200BVB60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E28F200BV-T60 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
E28F200BL-B150 Metal Strip Resistor; Series:WSR; Resistance:0.15ohm; Resistance Tolerance:+/- 1 %; Power Rating:2W; Temperature Coefficient:+/-75 ppm; Package/Case:4527; Terminal Type:PCB Surface Mount; Leaded Process Compatible:Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
E28F200B5B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F200B5B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F200B5T60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT
E28F200B5T80 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Intel 功能描述:
E28F200BL-B150 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*