參數(shù)資料
型號: E28F160S5-70
廠商: INTEL CORP
元件分類: PROM
英文描述: 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
中文描述: 2M X 8 FLASH 5V PROM, 70 ns, PDSO56
封裝: 14 X 20 MM, TSOP-56
文件頁數(shù): 22/50頁
文件大?。?/td> 1220K
代理商: E28F160S5-70
28F160S5, 28F320S5
E
22
ADVANCE INFORMATION
4.2.6
DEVICE GEOMETRY DEFINITION
This field provides critical details of the flash device
geometry.
Table 10. Device Geometry Definition
Offset
Length
(bytes)
Description
28F32/160S5
27h
01h
Device Size = 2
N
in Number of Bytes
27:
0015h
(16 Mbit)
27: 0016h
(32 Mbit)
28h
02h
Flash Device Interface Description
value
meaning
0002h
x8/x16 asynchronous
28:
29:
0002h
0000h
2Ah
02h
Maximum Number of Bytes in Write Buffer = 2
N
2A:
2B:
0005h
0000h
2Ch
01h
Number of Erase Block Regions within Device:
bits 7
–0 = x
= # of Erase Block Regions
2C:
0001h
2Dh
04h
Erase Block Region Information
bits 15–0 = y
, Where y+1 = Number of Erase Blocks of
Identical Size within Region
bits 31–16 = z
, Where the Erase Block(s) within This
Region are (z)
×
256 Bytes
y:
32 Blocks
(16 Mbit)
001Fh
0000h
2D:
2E:
y: 64 Blocks
(32 Mbit)
2D: 003Fh
2E: 0000h
z:
2F:
30:
(64-KB)
0000h
0001h
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