參數(shù)資料
型號(hào)： EDE2104ABSE-6E-E
廠商： ELPIDA MEMORY INC
元件分類(lèi)： DRAM
英文描述： 2G bits DDR2 SDRAM
中文描述： 512M X 4 DDR DRAM, 0.45 ns, PBGA68
封裝： ROHS COMPLIANT, FBGA-68
文件頁(yè)數(shù)： 8/81頁(yè)
文件大?。?/td> 604K
代理商： EDE2104ABSE-6E-E
EDE2104ABSE, EDE2108ABSE
Preliminary Data Sheet E1196E10 (Ver. 1.0)
8
DC Characteristics 1 (TC = 0
°
C to +85
°
C, VDD, VDDQ = 1.8V
±
0.1V)
max.
Parameter
Symbol
Grade
×
4
×
8
Unit
Test condition
one bank; tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
one bank; IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRC = tRC (IDD),
tRAS = tRAS min.(IDD); tRCD = tRCD (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks idle;
tCK = tCK (IDD);
CKE is L;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are STABLE;
Data bus inputs are FLOATING
all banks idle;
tCK = tCK (IDD);
CKE is H, /CS is H;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open;
tCK = tCK (IDD);
CKE is L;
Other control and address
bus inputs are STABLE;
Data bus inputs are
FLOATING
all banks open;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
all banks open, continuous burst reads, IOUT = 0mA;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data pattern is same as IDD4W
all banks open, continuous burst writes;
BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD);
CKE is H, /CS is H between valid commands;
Address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
Operating current
(ACT-PRE)
IDD0
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Operating current
(ACT-READ-PRE)
IDD1
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Precharge power-
down standby current
IDD2P
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Precharge quiet
standby current
IDD2Q
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Idle standby current
IDD2N
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
IDD3P-F
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Fast PDN Exit
MRS (12) = 0
Active power-down
standby current
IDD3P-S
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Slow PDN Exit
MRS (12) = 1
Active standby current IDD3N
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Operating current
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
Operating current
-8G
-6E
-5C
TBD
TBD
TBD
TBD
TBD
TBD
mA
相關(guān)PDF資料
PDF描述
EDE2104ABSE-8G-E 2G bits DDR2 SDRAM
EDE2108ABSE 2G bits DDR2 SDRAM
EDE2108ABSE-5C-E 2G bits DDR2 SDRAM
EDE2108ABSE-6E-E 2G bits DDR2 SDRAM
EDE2108ABSE-8G-E 2G bits DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2104ABSE-8G-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:2G bits DDR2 SDRAM
EDE2108ABSE 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:2G bits DDR2 SDRAM
EDE2108ABSE-5C-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:2G bits DDR2 SDRAM
EDE2108ABSE-6E-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:2G bits DDR2 SDRAM
EDE2108ABSE-8G-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:2G bits DDR2 SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*