參數(shù)資料
型號(hào): EDE2508ABSE
廠商: Elpida Memory, Inc.
英文描述: 256M bits DDR2 SDRAM
中文描述: 256M比特DDR2 SDRAM內(nèi)存
文件頁(yè)數(shù): 6/66頁(yè)
文件大?。?/td> 708K
代理商: EDE2508ABSE
EDE2508ABSE, EDE2516ABSE
Preliminary Data Sheet E0573E30 (Ver. 3.0)
6
Recommended DC Operating Conditions (SSTL_18)
Parameter
Symbol
min.
typ.
max.
Unit
Notes
Supply voltage
VDD
1.7
1.8
1.9
V
4
Supply voltage for output
VDDQ
1.7
1.8
1.9
V
4
Supply voltage for DLL
VDDL
1.7
1.8
1.9
V
4
VREF
0.49
×
VDDQ
0.50
×
VDDQ
0.51
×
VDDQ
V
1, 2
Input reference voltage
Termination voltage
VTT
VIH (DC)
VIL (DC)
VREF
0.04
VREF
+
0.125
0.3
VREF
VREF
+
0.04
VDDQ
+
0.3
VREF – 0.125 V
V
V
3
DC input logic high
DC input low
AC input logic high
-6C, -6E
-5C
AC input low
-6C, -6E
-5C
Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically
the value of VREF is expected to be about 0.5
×
VDDQ of the transmitting device and VREF are expected
to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed
±
2% VREF (DC).
3. VTT of transmitting device must track VREF of receiving device.
4. VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and
VDDL tied together.
VIH (AC)
VREF
+
0.200
V
VIH (AC)
VREF
+
0.250
V
VIL (AC)
VREF – 0.200 V
VIL (AC)
VREF – 0.250 V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
EDE2508ABSE-5C-E 制造商:ELPIDA 制造商全稱(chēng):Elpida Memory 功能描述:256M bits DDR2 SDRAM
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