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參數(shù)資料
| 型號(hào)： | EM39LV80070M |
| 廠商： | ELAN Microelctronics Corp . |
| 英文描述： | DDR-I, 13/26-Bit Registered Buffer |
| 中文描述： | 分位（512Kx16）閃存 |
| 文件頁(yè)數(shù)： | 11/25頁(yè) |
| 文件大?。?/td> | 295K |
| 代理商： | EM39LV80070M |
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EM39LV800
8M Bits (512Kx16) Flash Memory
SPECIFICATION
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 11 of
25
Operating Range
Model Name
Ambient Temperature
V
DD
EM39LV800
0
°
C to +70
°
C
2.7~3.6V
Table 7:
Operating Range
AC Conditions of Test
Input Rise/Fall Time ..................................................................... 5ns
Output Load ................................................................................. CL=30pF for 55Rns
Output Load ................................................................................. CL=100pF for 70ns/90ns
See Figures 14 and 15
DC CHARACTERISTICS (CMOS Compatible)
Parameter
Description
Test Conditions
Min
Max
Unit
I
DD
Power Supply Current
Read
Program and Erase
Address Input =V
IL
/V
IH
, at f=1/T
RC
Min,
V
DD
=V
DD
Max
CE#=OE#=V
IL
, WE#=V
IH
, all I/Os open
CE#=WE#=V
IL
, OE#=V
IH
,
30
30
mA
mA
I
SB
Standby V
DD
Current
CE#=V
IHC
, V
DD
=V
DD
Max
20
μ
A
I
LI
I
LO
Input Leakage Current
Output Leakage Current
V
IN
=GND to V
DD,
V
DD
=V
DD
Max
V
OUT
=GND to V
DD,
V
DD
=V
DD
Max
1
10
μ
A
μ
A
V
IL
V
IH
V
IHC
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
V
DD
=V
DD
Min
V
DD
=V
DD
Max
V
DD
=V
DD
Max
0.7 V
DD
V
DD
-0.3
0.8
V
V
V
V
OL
V
OH
Output Low Voltage
Output High Voltage
I
OL
=100
μ
A, V
DD
=V
DD
Min
I
OH
=-100
μ
A, V
DD
=V
DD
Min
V
DD
-0.2
0.2
V
V
Table 8:
DC Characteristics (Cmos Compatible)
Recommended System Power-up Timing
Parameter
Description
Min
Unit
T
PU-READ
*
Power-up to Read Operation
100
μ
s
T
PU-WRITE
*
Power-up to Program/Erase Operation
100
μ
s
*
This parameter is measured only for initial qualification and after a design or process change that
could affect this parameter.
Table 9:
Recommended System Power-up Timing
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