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參數(shù)資料
| 型號： | EN29LV640 |
| 廠商： | Eon Silicon Solution Inc. |
| 英文描述： | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| 中文描述： | 64兆位（4米× 16位），3.0伏的CMOS只，統(tǒng)一部門快閃記憶體 |
| 文件頁數(shù)： | 31/45頁 |
| 文件大?。?/td> | 440K |
| 代理商： | EN29LV640 |
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ABSOLUTE MAXIMUM RATINGS
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
Parameter
Value
Unit
Storage Temperature
-65 to +125
°
C
Plastic Packages
-65 to +125
°
C
Ambient Temperature
With Power Applied
-55 to +125
°
C
Output Short Circuit Current
P
1
P
200
mA
V
CC
-0.5 to 4.0
V
A9, OE#, WP#/ACC
and RESET#
P
2
All other pins
P
3
P
-0.5 to +11.5
V
Voltage with
Respect to Ground
P
0.5 to V
CC
+ 0.5
V
Notes:
1.
2.
No more than one output shorted at a time. Duration of the short circuit should not be greater than one second.
Minimum DC input voltage on A9, OE#, RESET# and WP#/ACC pins is –0.5V. During voltage transitions, A9, OE#,
RESET# and WP#/ACC pins may undershoot V
B
See figure below. Maximum DC input voltage on A9, OE#, and RESET# is 11.5V which may overshoot to 12.5V for periods
up to 20ns.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot V
B
ss
periods of up to 50ns and to –2.0 V for periods of up to 20ns. See figure below. Maximum DC voltage on output and I/O
pins is V
B
cc
below.
Stresses above the values so mentioned above may cause permanent damage to the device. These values are for a stress
rating only and do not imply that the device should be operated at conditions up to or above these values. Exposure of the
device to the maximum rating values for extended periods of time may adversely affect the device reliability.
B
to –1.0V for periods of up to 50ns and to –2.0V for periods of up to 20ns.
3.
B
to –1.0V for
B
+ 0.5 V. During voltage transitions, outputs may overshoot to V
B
cc
B
+ 1.5 V for periods up to 20ns. See figure
4.
RECOMMENDED OPERATING RANGES
P
1
P
Parameter
Value
Unit
Ambient Operating Temperature
Commercial Devices
Industrial Devices
0 to 70
-40 to 85
°
C
Operating Supply Voltage
V
CC
Full Voltage Range:2.7 to
3.6V
Regulated Voltage Range:3.0
to 3.6V
V
1.Recommended Operating Ranges define those limits between which the functionality of the device is guaranteed.
Maximum Negative Overshoot
Waveform
Maximum Positive Overshoot
Waveform
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| EN29LV640H-90BC | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90BCP | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90BI | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90BIP | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
| EN29LV640H-90TC | 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| EN29LV800AB-70TC | 制造商:Eon Silicon Solution Inc 功能描述: |
| EN29LV800BB-70TCP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29LV800B Series, 8 Mbit 70 NS 48 TSOP 3 V Bottom Boot Sector NOR Flash |
| EN29LV800CT-70TIP | 制造商:EON SILICON SOLUTION INC 功能描述:8mb TSOP 70ns nor flash |
| EN29SL400B-90BIP | 制造商:EON SILICON SOLUTION INC 功能描述:EN29SL400 Series, 4 Mbit 90 NS 48 FBGA 1.8 V Bottom Boot Sector NOR Flash |
| EN2-B1H1 | 制造商:NEC 制造商全稱:NEC 功能描述:AUTOMOTIVE RELAYS (Twin, Single) Relays |
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