參數(shù)資料
型號: EN29LV640
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
中文描述: 64兆位(4米× 16位),3.0伏的CMOS只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 41/45頁
文件大?。?/td> 440K
代理商: EN29LV640
Figure 8. Alternate CE#
Controlled Write Operation Timings
Notes:
PA = address of the memory location to be programmed.
PD = data to be programmed at byte address.
VA = Valid Address for reading program or erase status
D
B
Shown above are the last two cycles of the program or erase command sequence and the last status read cycle
RESETt# shown to illustrate t
B
RH
sequence.
Figure 9. DQ2 vs. DQ6
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
B
= array data read at VA
B
measurement references. It cannot occur as shown during a valid command
WE#
DQ6
DQ2
Enter
Embedded
Erase
Erase
Suspend
Enter Erase
Suspend
Program
Erase
Resume
Erase
Enter
Suspend
Read
Enter
Suspend
Program
Erase
Erase
Complete
Erase
Suspend
Read
t
WC
t
RH
t
AS
t
AH
t
WH
t
GHEL
t
CPH
t
CP
t
WS
t
DH
t
DS
t
BUSY
t
CWHWH1
/ t
CWHWH2
/ t
CWHWH3
Status
D
OUT
0xA0 for
Program
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
VA
Addresses
WE#
OE#
CE#
Data
RY/BY#
Reset#
PA for Program
SA for Sector Erase
0x555 for Chip Erase
0x555 for Program
0x2AA for Erase
相關PDF資料
PDF描述
EN29LV640H-90BC 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BCP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BI 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BIP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90TC 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
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