參數(shù)資料
型號: EN29LV640
廠商: Eon Silicon Solution Inc.
英文描述: 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
中文描述: 64兆位(4米× 16位),3.0伏的CMOS只,統(tǒng)一部門快閃記憶體
文件頁數(shù): 36/45頁
文件大?。?/td> 440K
代理商: EN29LV640
AC CHARACTERISTICS
Table 14. Write (Erase/Program) Operations
Parameter
Symbols
JEDEC
Standard
This Data Sheet may be revised by subsequent versions 2005 Eon Silicon Solution, Inc., www.essi.com.tw
or modifications due to changes in technical specifications.
Rev. C, Issue Date: 2007/01/23
EN29LV640
Speed Options
Description
90
Unit
t
B
AVAV
B
t
B
WC
B
Write Cycle Time
Min
90
ns
t
B
AVWL
B
t
B
AS
B
Address Setup Time
Min
0
ns
t
B
WLAX
B
t
B
AH
B
Address Hold Time
Min
40
ns
t
B
DVWH
B
t
B
DS
B
Data Setup Time
Min
40
ns
t
B
WHDX
B
t
B
DH
B
Data Hold Time
Min
0
ns
t
B
OEH
B
Output Enable Hold Time
during Toggle and DATA#
Polling
Read Recovery Time before
Write (OE# High to WE# Low)
CE# Setup Time
Min
20
ns
t
B
GHWL
t
B
ELWL
t
B
WHEH
t
B
WLWH
t
B
WHDL
B
t
B
GHWL
t
B
CS
t
B
CH
t
B
WP
t
B
WPH
B
Min
0
ns
B
B
Min
0
ns
B
B
CE# Hold Time
Min
0
ns
B
B
Write Pulse Width
Min
30
ns
B
B
Write Pulse Width High
Min
25
ns
t
B
WHWH1
t
B
WHWH1
B
Programming Operation
Typ
8
μs
t
B
WHWH1
B
t
B
WHWH1
B
Accelerated Programming
Operation
Typ
5
μs
t
B
WHWH2
B
t
B
WHWH2
B
Sector Erase Operation
Typ
0.5
s
t
B
WHWH3
B
t
B
WHWH3
B
Chip Erase Operation
Typ
64
s
t
B
VHH
B
V
HH
Rise and Fall Time
Min
250
ns
t
B
VCS
B
V
CC
Setup Time
Min
50
μs
相關(guān)PDF資料
PDF描述
EN29LV640H-90BC 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BCP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BI 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90BIP 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
EN29LV640H-90TC 64 Megabit (4M x 16-bit ) CMOS 3.0 Volt-only, Uniform Sector Flash Memory
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