TA = 25°C, unless o" />
參數(shù)資料
型號(hào): EV-ADF4360-4EB1Z
廠商: Analog Devices Inc
文件頁(yè)數(shù): 21/24頁(yè)
文件大小: 0K
描述: BOARD EVAL FOR ADF4360-4
標(biāo)準(zhǔn)包裝: 1
主要目的: 計(jì)時(shí),頻率合成器
嵌入式:
已用 IC / 零件: ADF4360-4
主要屬性: 帶 VCO 的單路整數(shù)-N PLL
次要屬性: 1.6GHz,200kHz PFD
已供物品: 板,纜線,CD
其它名稱: Q7037782
ADF4360-4
Data Sheet
Rev. B | Page 6 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
0.3 V to +3.9 V
AVDD to DVDD
0.3 V to +0.3 V
VVCO to GND
0.3 V to +3.9 V
VVCO to AVDD
0.3 V to +0.3 V
Digital I/O Voltage to GND
0.3 V to VDD + 0.3 V
Analog I/O Voltage to GND
0.3 V to VDD + 0.3 V
REFIN to GND
0.3 V to VDD + 0.3 V
Operating Temperature Range
Maximum Junction Temperature
150°C
CSP θJA Thermal Impedance
(Paddle Soldered)
50°C/W
(Paddle Not Soldered)
88°C/W
Lead Temperature, Soldering Reflow
260°C
1
GND = AGND = DGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
This device is a high performance RF integrated circuit with an
ESD rating of <1 kV and it is ESD sensitive. Proper precautions
should be taken for handling and assembly.
TRANSISTOR COUNT
12543 (CMOS) and 700 (Bipolar)
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the
human body and test equipment and can discharge without detection. Although this product features proprie-
tary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic
discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
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