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參數(shù)資料
| 型號： | EVAL-AD5116EBZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 10/16頁 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR AD5116 |
| 標準包裝： | 1 |
| 系列： | * |
Data Sheet
AD5116
Rev. B | Page 3 of 16
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
5 kΩ, 10 kΩ, and 80 kΩ versions: VDD = 2.3 V to 5.5 V, VA = VDD, VB = 0 V, 40°C < TA < +125°C, unless otherwise noted.
Table 2.
Parameter
Symbol
Test Conditions/Comments
Min
Typ1
Max
Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution
N
6
Bits
Resistor Integral Nonlinearity2
R-INL
RAB = 5 k, VDD = 2.3 V to 2.7 V
2.5
±0.5
+2.5
LSB
RAB = 5 k, VDD = 2.7 V to 5.5 V
1
±0.25
+1
LSB
RAB = 10 k
1
±0.25
+1
LSB
RAB = 80 k
0.25
±0.1
+0.25
LSB
Resistor Differential Nonlinearity2
R-DNL
1
±0.25
+1
LSB
Nominal Resistor Tolerance
ΔRAB/RAB
8
+8
%
Resistance Temperature Coefficient3
(ΔRAB/RAB)/ΔT × 106
Code = full scale
35
ppm/°C
Wiper Resistance
RW
Code = zero scale
70
140
RBS
Code = bottom scale
45
80
RTS
Code = top scale
70
140
DC CHARACTERISTICS—POTENTIOMETER
DIVIDER MODE
Integral Nonlinearity4
INL
0.5
±0.15
+0.5
LSB
Differential Nonlinearity4
DNL
0.5
±0.15
+0.5
LSB
Full-Scale Error
VWFSE
RAB = 5 k
2.5
LSB
RAB =10 k
1.5
LSB
RAB = 80 k
1
LSB
Zero-Scale Error
VWZSE
RAB = 5 k
+1.5
LSB
RAB =10 k
+1
LSB
RAB = 80 k
+0.25
LSB
Voltage Divider Temperature Coefficient3
(ΔVW/VW)/ΔT × 106
Code = half scale
±10
ppm/°C
RESISTOR TERMINALS
RAB = 5 k, 10 k
6
+6
mA
RAB = 80 k
1.5
+1.5
mA
Terminal Voltage Range5
GND
VDD
V
Capacitance A, Capacitance B3, 6
CA, CB
f = 1 MHz, measured to GND,
code = half scale, VW = VA = 2.5 V
or VW = VB = 2.5 V
20
pF
Capacitance W3, 6
CW
f = 1 MHz, measured to GND,
code = half scale, VA = VB = 2.5 V
35
pF
Common-Mode Leakage Current3
VA = VW = VB
50
nA
DIGITAL INPUTS (PU AND PD)
Input Logic3
High
VINH
2
V
Low
VINL
0.8
V
Input Current3
IN
±1
A
Input Capacitance3
CIN
5
pF
DIGITAL OUTPUT (
ASE)
Output High Voltage3
VOH
ISINK = 2 mA, VDD = 5 V
4.8
V
Output Current3
IO
VDD = 5 V
16
mA
Three-State Leakage Current3
IOZ
±1
A
Input Capacitance3
CIN
5
pF
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