參數(shù)資料
型號： F25L004A-50PG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： PROM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 512K X 8 FLASH 3V PROM, PDSO8
封裝： 0.150 INCH, ROHS COMPLIANT, SOIC-8
文件頁數(shù)： 20/32頁
文件大?。?/td> 393K
代理商： F25L004A-50PG
ES MT
ELECTRICAL SPECIFICATIONS
F25L004A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
20/32
Publication Date
:
Apr. 2007
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure
to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. Output shorted for no more than one second. No more than one output shorted at a time.
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . . . . C
L
= 15 pF for
≧
75MHz
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .C
L
= 30 pF for
≦
50MHz
See Figures 19 and 20
TABLE 6: DC OPERATING CHARACTERISTICS V
DD
= 2.7-3.6V ; TA=0~70oC
Limits
Max
15
Symbol
Parameter
Min
Units
mA
Test Conditions
I
DDR
Read Current
CE =0.1 V
DD
/0.9 V
DD
@33 MHz, SO=open
I
DDW
Program and Erase Current
40
75
mA
μA
CE =V
DD
I
SB
Standby Current
CE =V
DD
, VIN=V
DD
or V
SS
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=100 μA, V
DD
=V
DD
Min
I
OH
=-100 μA, V
DD
=V
DD
Min
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
1
1
μA
μA
V
V
V
V
0.7 V
DD
0.8
V
DD
-0.2
0.2
TABLE 7 : RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
T
PU-READ
1
V
DD
Min to Read Operation
10
μs
T
PU-WRITE
1
V
DD
Min to Write Operation
10
μs
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
C
OUT
1
Output Pin Capacitance
V
OUT
= 0V
12 pF
C
IN
1
Input Capacitance
V
IN
= 0V
6 pF
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
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