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參數(shù)資料
| 型號(hào)： | F25L016A |
| 廠商： | Elite Semiconductor Memory Technology Inc. |
| 元件分類： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁(yè)數(shù)： | 1/31頁(yè) |
| 文件大?。?/td> | 384K |
| 代理商： | F25L016A |
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ES MT
F25L016A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
1/31
Publication Date
:
Mar. 2007
16Mbit (2Mx8)
3V Only Serial Flash Memory
FEATURES
y
Single supply voltage 2.7~3.6V
y
Speed
- Read max frequency : 33MHz
- Fast Read max frequency : 50MHz;100MHz
y
Low power consumption
- typical active current
- 15
μ
A typical standby current
y
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
y
Program
- Byte program time 7
μ
s(typical)
y
Erase
- Chip erase time 10s(typical)
- Sector erase time 60ms(typical)
ORDERING INFORMATION
block erase time 1sec (typical)
y
Auto Address Increment (AAI) WORD Programming
- Decrease total chip programming time over
Word-Program operations
y
SPI Serial Interface
- SPI Compatible : Mode 0 and Mode3
y
End of program or erase detection
y
Write Protect (
WP
)
y
Hold Pin (HOLD)
y
Package available
- 8-pin SOIC 200-mil
Part No.
Speed
Package
COMMENTS
F25L016A –50PAG 50MHz
8 lead SOIC
200mil
Pb-free
F25L016A –100PAG 100MHz
8 lead SOIC
200mil
Pb-free
GENERAL DESCRIPTION
The F25L016A is a 16Megablt, 3V only CMOS Serial Flash
memory device organized as 2M bytes of 8 bits. This device is
packaged in 8-lead SOIC 200mil. ESMT’s memory devices
reliably store memory data even after 100,000 program and
erase cycles.
The F25L016A features a sector erase architecture. The device
memory array is divided into 512 uniform sectors with 4K byte
each ; 32 uniform blocks with 64K byte each. Sectors can be
erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in
other blocks. Whole chip erase capabilities provide the flexibility
to revise the data in the device.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
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| FLM3439-12F | C-Band Internally Matched FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| F25L016A_08 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A_1 | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A-100PAG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A-100PAIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
| F25L016A-50PAG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory |
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