參數(shù)資料
型號： F25L016A
廠商： Elite Semiconductor Memory Technology Inc.
元件分類： FLASH
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 10/31頁
文件大?。?/td> 384K
代理商： F25L016A
ES MT
Instructions
Instructions are used to Read, Write (Erase and Program), and
configure the F25L016A. The instruction bus cycles are 8 bits
each for commands (Op Code), data, and addresses. Prior to
executing any Byte-Program, Sector-Erase, Block-Erase, or
Chip-Erase instructions, the Write-Enable (WREN) instruction
must be executed first. The complete list of the instructions is
provided in Table 5. All instructions are synchronized off a high to
low transition of CE . Inputs will be accepted on the rising edge
F25L016A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.2
10/31
Publication Date
:
Mar. 2007
of SCK starting with the most significant bit. CE must be driven
TABLE 5: DEVICE OPERATION
INSTRUCTIONS
low before an instruction is entered and must be driven high after
the last bit of the instruction has been shifted in (except for Read,
Read-ID and Read-Status-Register instructions). Any low to high
transition on CE , before receiving the last bit of an instruction
bus cycle, will terminate the instruction in progress and return the
device to the standby mode.
Instruction commands (Op Code), addresses, and data are all
input from the most significant bit (MSB) first.
Bus Cycle
3
S
OUT
Hi-Z
Hi-Z
Hi-Z
Hi-Z
1
2
4
5
6
S
OUT
Cycle Type/
Operation
1,2
Max
Freq
S
IN
03H
0BH
20H
D8H
60H
C7H
02H
ADH
S
OUT
Hi-Z A
23
-A
16
Hi-Z A
23
-A
16
Hi-Z A
23
-A
16
Hi-Z A
23
-A
16
S
IN
S
OUT
Hi-Z A
15
-A
8
Hi-Z A
15
-A
8
Hi-Z A
15
-A
8
Hi-Z A
15
-A
8
S
IN
S
IN
S
OUT
S
IN
A
7
-A
0
Hi-Z
A
7
-A
0
Hi-Z
A
7
-A
0
Hi-Z
A
7
-A
0
Hi-Z
S
OUT
D
OUT
X
-
-
S
IN
X
-
-
Read
High-Speed-Read
Sector-Erase
(4K Byte)
Block-Erase (64K Byte)
Chip-Erase
6
Byte-Program
5
(AAI) Single-WORD Program
5,6
Read-Status-Register
(
RDSR
)
Enable-Write-Status-Register
(
EWSR
)
8
Write-Status-Register
(
WRSR
)
Write-Enable (
WREN
)
11
33
MHz
X
X
-
-
D
OUT
-
-
Hi-Z
-
-
-
-
-
-
-
-
-
-
Hi-Z A
23
-A
16
Hi-Z A
23
-A
16
Hi-Z A
15
-A
8
Hi-Z A
15
-A
8
Hi-Z
Hi-Z
Note
7
A
7
-A
0
Hi-Z D
IN
A
7
-A
0
Hi-Z D
IN
0
Note
7
Hi-Z
Hi-Z
Note
7
-
-
D
IN
1
Hi-Z
05H
Hi-Z
X
D
OUT
-
-
-
-
-
50H
Hi-Z
-
-
-
-
-
-
-
-
-
-
01H
Hi-Z
Data
Hi-Z
-
-
-.
-
-
-
-
-
06H
Hi-Z
-
-
-
-
-
-
-
-
-
-
Write-Disable (
WRDI
)
Read-Electronic-Signature
(
RES
)
04H
Hi-Z
-
-
-
-
-
-
-
-
-
-
ABH
Hi-Z
X
14H
-
-
-
-
-
-
-
-
20H(Top)
21H(Bottom)
Jedec-Read-ID (
JEDEC-ID
)
10
9FH
Hi-Z
X
8CH
X
X
15H
-
-
-
-
90H
(A0=0)
90H
(A0=1)
8CH
14H
14H
8CH
Read-ID (
RDID
)
50
MHz
100
MHz
Hi-Z A
23
-A
16
Hi-Z A
15
-A
8
Hi-Z
A
7
-A
0
Hi-Z
X
X
Enable SO to output RY/BY#
Status during AAI (
EBSY
)
Disable SO to output RY/BY#
Status during AAI (
DBSY
)
-
70H
Hi-Z
-
-
-
-
-
-
-
-
-
-
-
80H
Hi-Z
-
-
-
-
-
-
-
-
-
-
1. Operation: S
IN
= Serial In, S
OUT
= Serial Out
2. X = Dummy Input Cycles (V
IL
or V
IH
); - = Non-Applicable Cycles (Cycles are not necessary)
3. One bus cycle is eight clock periods.
4. Sector addresses: use AMS-A12, remaining addresses can be V
IL
or V
IH
5. Prior to any Byte-Program, Sector-Erase , Block-Erase ,or Chip-Erase operation, the Write-Enable (WREN) instruction must be
executed.
6. To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by the data to be
programmed.
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE .
8. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction
of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both
instructions effective.
9. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE .
10. The Jedec-Read-ID is output first byte 8CH as manufacture ID; second byte 20H as top memory type and second byte 21H as
相關(guān)PDF資料
PDF描述
F49B002UA 2 Mbit (256K x 8) 5V Only CMOS Flash Memory
F49L004BA 4 Mbit (512K x 8) 3V Only CMOS Flash Memory
FLH0041G 0.2 Amp Linear Power Operational Amplifier in a Hermetic 12-lead Package
FLM3439-12F C-Band Internally Matched FET
FLM5359-12F C-Band Internally Matched FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
F25L016A_08 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory
F25L016A_1 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory
F25L016A-100PAG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory
F25L016A-100PAIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory
F25L016A-50PAG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:16Mbit (2Mx8) 3V Only Serial Flash Memory
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*