參數(shù)資料
型號: FDFM2P110
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Integrated P-Channel PowerTrench MOSFET and Schottky Diode
中文描述: 3.5 A, 20 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-229WEEA
封裝: 3 X 3 MM, MLP-6
文件頁數(shù): 1/7頁
文件大?。?/td> 289K
代理商: FDFM2P110
August 2005
F
2005 Fairchild Semiconductor Corporation
FDFM2N111 Rev. C
2
(W)
1
FDFM2N111
Integrated N-Channel PowerTrench
MOSFET and Schottky Diode
General Description
FDFM2
N
111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
Applications
Standard Buck Converter
Features
4 A, 20 V R
DS(ON)
= 100m
@ V
GS
= 4.5 V
R
DS(ON)
= 150m
@ V
GS
= 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GSS
Parameter
Ratings
20
±
12
4
10
20
2
1.7
0.8
-55 to +150
Units
V
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous (Note 1a)
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current (Note 1a)
Power dissipation (Steady State) (Note 1a)
Power dissipation (Steady State) (Note 1b)
Operating and Storage Junction Temperature Range
I
D
A
V
RRM
I
O
V
A
P
D
W
T
J
, T
STG
o
C
R
θ
JA
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Ambient (Note 1b)
70
150
o
C/W
o
C/W
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
5
1
6
2
3
4
MLP 3x3
TOP
BOTTOM
A
A
S/C
S/C
G
D
PIN 1
A
S/C
D
A
S/C
G
C
D
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