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參數(shù)資料
| 型號： | FDFM2P110 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Integrated P-Channel PowerTrench MOSFET and Schottky Diode |
| 中文描述： | 3.5 A, 20 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, MO-229WEEA |
| 封裝： | 3 X 3 MM, MLP-6 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 289K |
| 代理商： | FDFM2P110 |
F
FDFM2N111 Rev. C
2
(W)
4
Typical Characteristics
Figure 1.
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
,
2.5V
2.0V
V
GS
= 4.5V
3.0V
3.5V
On-Region Characteristics
Figure 2.
Drain Current and Gate Voltage
0.8
1
1.2
1.4
1.6
1.8
2
0
2
4
6
8
10
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 2.5V
4.0V
3.5V
4.5V
3.0V
On-Resistance Variation with
Figure 3.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 4A
V
GS
= 4.5V
On-Resistance Variation with
Temperature
Figure 4.
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
D
,
I
D
= 2A
T
A
= 125
o
C
T
A
= 25
o
C
On-Resistance Variation with
Gate-to-Source Voltage
Figure 5. Transfer Characteristics
0
2
4
6
8
10
0.5
1
1.5
2
2.5
3
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= 5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
-
S
,
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDFM2P110_0508 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode |
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