參數(shù)資料
型號(hào)： FDG6331L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 外設(shè)及接口
英文描述： Integrated Load Switch
中文描述： BUF OR INV BASED PRPHL DRVR, PDSO6
封裝： SC-70, SMT-6
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 54K
代理商： FDG6331L
April 2001
FDG6331L
Integrated Load Switch
200
1
Fairchild Semiconductor
Corporation
FDG6331L Rev B(W)
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 0.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6 package.
Applications
Power management
Load switch
Features
–0.8 A, –8 V.
R
DS(ON)
= 260 m
@ V
GS
= –4.5 V
R
DS(ON)
= 330 m
@ V
GS
= –2.5 V
R
DS(ON)
= 450 m
@ V
GS
= –1.8 V
Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
High performance trench technology for extremely
low R
DS(ON)
Compact industry standard SC70-6 surface mount
package
Pin 1
SC70-6
3
2
1
4
5
6
Q1
Q2
Vout,C1
Vout,C1
R2
Vin,R1
ON/OFF
R1,C1
See Application Circuit
Equivalent Circuit
V
DROP
+
–
IN
OUT
ON/OFF
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
IN
Gate-Source Voltage (Q2)
V
ON/OFF
Gate-Source Voltage (Q1)
I
Load
Load Current
– Continuous
– Pulsed
(Note 2)
P
D
Maximum Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
±
8
–0.5 to 8
–0.8
–2.4
0.3
–55 to +150
Units
V
V
A
W
°
C
(Note 2)
(Note 1)
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
415
°
C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.31
FDG6331L
7’’
8mm
3000 units
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDG6331L_Q 功能描述:電源開關(guān) IC - 配電 Integ. Load Switch RoHS:否 制造商:Exar 輸出端數(shù)量:1 開啟電阻（最大值）:85 mOhms 開啟時(shí)間（最大值）:400 us 關(guān)閉時(shí)間（最大值）:20 us 工作電源電壓:3.2 V to 6.5 V 電源電流（最大值）: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23-5
FDG6332C 功能描述:MOSFET 20V N&P-Channel Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6332C"F085 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N AND P CH 20V 0.18OHM 700mA 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N AND P CH, 20V, 0.18OHM, 700mA,
FDG6332C_F085 功能描述:MOSFET 20V N&P Chan PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDG6332C_G 制造商:Fairchild Semiconductor Corporation 功能描述:LOW POWER MOSFET
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