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參數(shù)資料
| 型號(hào)： | FM20L08-60-TG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| 中文描述： | 為1Mbit FRAM存儲(chǔ)器Bytewide？擴(kuò)展級(jí)溫度 |
| 文件頁(yè)數(shù)： | 2/14頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | FM20L08-60-TG |
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FM20L08 - Extended Temp.
Rev. 1.4
Oct. 2005
Page 2 of 14
A
CE
Control
Logic
WE
B
A(16:3)
A(2:0)
I/O Latch & Bus Driver
OE
DQ(7:0)
16K x 8 block
16K x 8 block
16K x 8 block
16K x 8 block
16K x 8 block
16K x 8 block
16K x 8 block
16K x 8 block
VDD Monitor
VDD
LVL
A(16:0)
Write
Protect
.
Column Decoder
. . .
Figure 1. Block Diagram
Pin Description
Pin Name
A(16:0)
Type
Input
Pin Description
Address inputs: The 17 address lines select one of 131,072 bytes in the FRAM array.
The address value is latched on the falling edge of /CE. Addresses A(2:0) are used for
page mode read and write operations.
Chip Enable inputs: The device is selected and a new memory access begins when /CE
is low. The entire address is latched internally on the falling edge of chip enable.
Subsequent changes to the A(2:0) address inputs allow page mode operation.
Write Enable: A write cycle begins when /WE is asserted. The rising edge causes the
FM20L08 to write the data on the DQ bus to the FRAM array. The falling edge of /WE
latches a new column address for fast page mode write cycles.
Output Enable: When /OE is low, the FM20L08 drives the data bus when valid data is
available. Deasserting /OE high tri-states the DQ pins.
Data: 8-bit bi-directional data bus for accessing the FRAM array.
Low Voltage Lockout: When the voltage monitor detects that V
DD
is below V
TP
, the
/LVL pin will be asserted low. While /LVL is low, the memory array cannot be accessed
which prevents a low voltage write from corrupting data. When V
DD
is within its normal
operating limits, the /LVL signal will be pulled high.
Do Not Use: This pin should be left unconnected.
Supply Voltage: 3.3V
Ground
/CE
Input
/WE
Input
/OE
Input
DQ(7:0)
/LVL
I/O
Output
DNU
VDD
VSS
-
Supply
Supply
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM20L08-60-TG1 | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TG1TR | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TGC | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TGC1 | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TGC1TR | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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