參數(shù)資料
型號： FM20L08-60-TG
廠商： Electronic Theatre Controls, Inc.
英文描述： 1Mbit Bytewide FRAM Memory ? Extended Temp
中文描述： 為1Mbit FRAM存儲器Bytewide？擴展級溫度
文件頁數(shù)： 9/14頁
文件大?。?/td> 153K
代理商： FM20L08-60-TG
FM20L08 - Extended Temp.
Rev. 1.4
Oct. 2005
Page 9 of 14
Read Cycle
AC Parameters
(T
A
= -25
°
C to +85
°
C, C
L
= 30 pF, V
DD
= 3.3V
+10%, -5%
unless otherwise specified)
Symbol Parameter
t
RC
Read Cycle Time
t
CE
Chip Enable Access Time
t
AA
Address Access Time
t
OH
Output Hold Time
t
AAP
Page Mode Address Access Time
t
OHP
Page Mode Output Hold Time
t
CA
Chip Enable Active Time
t
PC
Precharge Time
t
AS
Address Setup Time (to /CE low)
t
AH
Address Hold Time (/CE-controlled)
t
OE
Output Enable Access Time
t
HZ
Chip Enable to Output High-Z
t
OHZ
Output Enable High to Output High-Z
Write Cycle
AC Parameters
(T
A
= -25
°
C to +85
°
C, V
DD
= 3.3V
+10%, -5%
unless otherwise specified)
Symbol Parameter
t
WC
Write Cycle Time
t
CA
Chip Enable Active Time
t
CW
Chip Enable to Write Enable High
t
PC
Precharge Time
t
PWC
Page Mode Write Enable Cycle Time
t
WP
Write Enable Pulse Width
t
AS
Address Setup Time (to /CE low)
t
AH
Address Hold Time (/CE-controlled)
t
ASP
Page Mode Address Setup Time
(to /WE low)
t
AHP
Page Mode Address Hold Time
(to /WE low)
t
WLC
Write Enable Low to /CE High
t
WLA
Write Enable Low to A(16:3) Change
t
AWH
A(16:3) Change to Write Enable High
t
DS
Data Input Setup Time
t
DH
Data Input Hold Time
t
WZ
Write Enable Low to Output High Z
t
WX
Write Enable High to Output Driven
t
WS
Write Enable to /CE Low Setup Time
t
WH
Write Enable to /CE High Hold Time
Notes
1
This parameter is characterized but not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs.
Power Cycle Timing
(T
A
= -25
°
C to +85
°
C, V
DD
= 3.3V
+10%, -5%
unless otherwise specified)
Symbol
Parameter
t
PULV
Power Up to /LVL Inactive Time (V
TP
to /LVL high)
t
PDLV
Power Down to /LVL Active Time (V
TP
to /LVL low)
t
PU
Power Up (/LVL high) to First Access Time
t
PD
Last Access (/CE high) to Power Down (V
DD
min)
t
VR
V
DD
Rise Time
t
VF
V
DD
Fall Time
Notes
1
Slope measured at any point on V
DD
waveform.
-60
Min
350
-
-
50
-
5
60
290
5
60
-
-
-
Max
-
60
350
-
25
-
-
-
-
-
10
15
15
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
-60
Min
350
60
60
290
30
15
5
60
5
15
25
25
350
20
0
-
5
0
0
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
15
-
-
-
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
2
2
Min
0
0
0
0
50
100
Max
50
15
-
-
-
-
Units
μ
s
μ
s
μ
s
μ
s
μ
s/V
μ
s/V
Notes
1, 2
1, 2
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參數(shù)描述
FM20L08-60-TG1 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM20L08-60-TG1TR 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM20L08-60-TGC 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM20L08-60-TGC1 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
FM20L08-60-TGC1TR 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor
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