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參數(shù)資料
| 型號： | FM20L08-60-TG |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 1Mbit Bytewide FRAM Memory ? Extended Temp |
| 中文描述： | 為1Mbit FRAM存儲器Bytewide？擴展級溫度 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大小： | 153K |
| 代理商： | FM20L08-60-TG |
FM20L08 - Extended Temp.
Rev. 1.4
Oct. 2005
Page 7 of 14
Software Write Protect Timing
CE
A(16:0)
WE
DQ(7:0)
05555
Data
Data
OE
1AAAA
03333
1CCCC
100FF
0FF00
1AAAA
1CCCC
0FF00
00000
SRAM Drop-In Replacement
The FM20L08 has been designed to be a drop-in
replacement for standard asynchronous SRAMs. The
device does not require /CE to toggle for each new
address. /CE may remain low indefinitely while V
DD
is applied. When /CE is low, the device automatically
detects address changes and a new access is begun. It
also allows page mode operation at speeds up to
33MHz.
Although /CE may be held low for extended
periods of time, the pin should not be tied to
ground or held low during power cycles. /CE
must be pulled high and allowed to track V
DD
during powerup and powerdown cycles. It is the
user’s responsibility to ensure that chip enable is
high to prevent incorrect operation. Figure 3
shows a pullup resistor on /CE which will keep the
pin high during power cycles assuming the
MCU/MPU pin tri-states during the reset
condition. The pullup resistor value should be
chosen to ensure the /CE pin tracks V
DD
yet a high
enough value that the current drawn when /CE is
low is not an issue.
Figure 3. Use of Pullup Resistor on /CE
For applications that require the lowest power
consumption, the /CE signal should be active only
during memory accesses. Due to the external pullup
resistor, some supply current will be drawn while /CE
is low. When /CE is high, the device draws no more
than the maximum standby current I
SB
.
The FM20L08 is backward compatible with the
256Kbit FM18L08 device. So, operating the
FM20L08 with /CE toggling low on every address is
perfectly acceptable.
CE
WE
OE
A(16:0)
DQ
FM20L08
V
DD
MCU/
MPU
R
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM20L08-60-TG1 | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TG1TR | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TGC | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TGC1 | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM20L08-60-TGC1TR | 功能描述:F-RAM 1M (128Kx8) 60ns 3.3 RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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