參數(shù)資料
型號: FMB100
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: NPN Multi-Chip General Purpose Amplifier
中文描述: 500 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-6
文件頁數(shù): 1/3頁
文件大小: 44K
代理商: FMB100
F
FMB100
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector
currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
T
A
=25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Discrete POWE R & Signal
T echnologies
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
75
6.0
500
V
V
V
mA
°
C
-55 to +150
Thermal Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
FMB100
700
5.6
180
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
R
θ
JA
1998 Fairchild Semiconductor Corporation
SuperSOT
-6
Mark: .NA
C1
E1
C2
B1
E2
B2
pin #1
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