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參數(shù)資料
| 型號： | FMB2222A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Multi-Chip General Purpose Amplifier(NPN多片通用放大器) |
| 中文描述： | 500 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPERSOT-6 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | FMB2222A |
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown
Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CEX
Collector Cutoff Current
I
CBO
Collector Cutoff Current
ON CHARACTERISTICS
h
FE
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
C
= 20 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 100 kHz
V
EB
= 0.5 V, I
C
= 0, f = 100 kHz
I
C
= 100
μ
A, V
CE
= 10 V,
R
S
= 1.0 k
, f = 1.0 kHz
300
MHz
C
obo
C
ibo
NF
Output Capacitance
Input Capacitance
Noise Figure
4.0
20
2.0
pF
pF
dB
SWITCHING CHARACTERISTICS
t
d
Delay Time
t
r
Rise Time
t
s
Storage Time
t
f
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
I
C
= 10 mA, I
B
= 0
40
V
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
V
CB
= 60 V, I
E
= 0
V
CB
= 60 V, I
E
= 0, T
A
= 125
°
C
V
EB
= 3.0 V, I
C
= 0
V
CE
= 60 V, V
EB(OFF)
= 3.0 V
75
6.0
V
V
nA
μ
A
μ
A
nA
nA
10
0.01
10
10
20
I
EBO
I
BL
Emitter Cutoff Current
Base Cutoff Current
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 10 mA,V
CE
= 10 V,T
A
= -55
°
C
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 150 mA, V
CE
= 1.0 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 1.0 mA
I
C
= 500 mA, I
B
= 50 mA
35
50
75
35
100
50
40
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
0.3
1.0
1.2
2.0
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage*
0.6
V
CC
= 30 V, V
BE(OFF)
= 0.5 V,
I
C
= 150 mA, I
B1
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= I
B2
= 15 mA
8
20
180
40
ns
ns
ns
ns
NPN Multi-Chip General Purpose Amplifier
(continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FMB2222A | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor 制造商:Fairchild Semiconductor Corporation 功能描述:BIPOLAR TRANSISTOR, QUAD NPN, 40V SSOT-6 |
| FMB2222A_Q | 功能描述:兩極晶體管 - BJT NPN Multi-Chip Trans General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMB2227A | 功能描述:兩極晶體管 - BJT NPN/ PNP Dual Trans Complimentary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMB2227A_Q | 功能描述:兩極晶體管 - BJT NPN/ PNP Dual Trans Complimentary RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| FMB22DYFD | 制造商:Sullins Connector Solutions 功能描述:CONN CARDEDGE DL44POS .050 SMD |
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