參數(shù)資料
型號: FMC6G20US60
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: Multi-Function Generator RoHS Compliant: NA
中文描述: 20 A, 600 V, N-CHANNEL IGBT
封裝: 21PM-AA, 21 PIN
文件頁數(shù): 4/9頁
文件大?。?/td> 648K
代理商: FMC6G20US60
2001 Fairchild Semiconductor Corporation
FMC6G20US60 Rev. A3
F
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
Characteristics
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
Fig 5. Saturation Voltage vs. V
GE
Fig 6. Saturation Voltage vs. V
GE
0
2
4
6
8
0
10
20
30
40
50
60
20V
12V
15V
V
GE
= 10V
Common Emitter
T
C
= 25
C
C
Collector - Emitter Voltage, V
CE
[V]
1
10
0
10
20
30
40
50
60
Common Emitter
V
GE
= 15V
T
C
= 25
━━
T
C
= 125
------
C
C
Collector - Emitter Voltage, V
CE
[V]
-50
0
50
100
150
0
1
2
3
4
5
20A
40A
30A
I
C
= 10A
Common Emitter
V
GE
= 15V
C
C
Case Temperature, T
C
[
]
0
4
8
12
16
20
24
28
0.1
1
10
100
1000
Duty cycle : 50%
T
C
= 100
Power Dissipation = 32W
V
CC
= 300V
Load Current : peak of square wave
Frequency [KHz]
L
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 25
40A
20A
I
C
= 10A
C
C
Gate - Emitter Voltage, V
GE
[V]
0
4
8
12
16
20
0
4
8
12
16
20
Common Emitter
T
C
= 125
40A
20A
I
C
C
C
Gate - Emitter Voltage, V
GE
[V]
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