參數(shù)資料
型號： FMC6G20US60
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： IGBT 晶體管
英文描述： Multi-Function Generator RoHS Compliant: NA
中文描述： 20 A, 600 V, N-CHANNEL IGBT
封裝： 21PM-AA, 21 PIN
文件頁數(shù)： 5/9頁
文件大?。?/td> 648K
代理商： FMC6G20US60
2001 Fairchild Semiconductor Corporation
FMC6G20US60 Rev. A3
F
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs.
Gate Resistance
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
Fig 11. Turn-On Characteristics vs.
Collector Current
Fig 12. Turn-Off Characteristics vs.
Collector Current
1
10
0
400
800
1200
1600
2000
2400
Cres
Coes
Cies
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25
℃
C
Collector - Emitter Voltage, V
CE
[V]
1
10
100
10
100
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
━━
T
C
= 125
℃
------
Ton
Tr
S
Gate Resistance, R
G
[
]
1
10
100
100
1000
Toff
Tf
Toff
Tf
Common Emitter
V
CC
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
1
10
100
100
1000
Eoff
Eon
Eoff
Common Emitter
V
= 300V, V
GE
=
±
15V
I
C
= 20A
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Gate Resistance, R
G
[
]
10
15
20
25
30
35
40
10
100
Ton
Tr
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
10
15
20
25
30
35
40
100
1000
Tf
Toff
Toff
Tf
Common Emitter
V
GE
=
±
15V, R
G
= 10
T
C
= 25
℃
━━
T
C
= 125
℃
------
S
Collector Current, I
C
[A]
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FMC6G30US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FMC6G50US60 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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FMC7A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-25
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