參數(shù)資料
型號(hào): FQB19N20C
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 200V N-Channel MOSFET
中文描述: 19 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: D2PAK-3
文件頁數(shù): 4/9頁
文件大小: 876K
代理商: FQB19N20C
Rev. A, March 2004
F
2004 Fairchild Semiconductor Corporation
10
-5
10
-4
10
-3
10
-2
1 0
-1
1 0
0
1 0
1
10
-2
10
-1
10
0
N ote s :
1 . Z
θ
JC
(t) = 0.90
2 . D uty F actor, D = t
1
/t
2
3 . T
JM
- T
C
= P
D M
* Z
θ
JC
(t)
/W M a x.
single pulse
D = 0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
J
(
t
1
, S q u are W a ve P u lse D u ration [se c]
25
50
75
100
125
150
0
5
10
15
20
I
D
,
T
C
, Case Temperature [ ]
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10 ms
100
μ
s
DC
1 ms
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
J
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
= 10 V
2. I
D
= 9.5 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250 μA
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
Figure 8. On-Resistance Variation
vs Temperature
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