參數(shù)資料
型號(hào)： FQB3N25
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 250V N-Channel MOSFET
中文描述： 2.8 A, 250 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝： D2PAK-2
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 621K
代理商： FQB3N25
2000 Fairchild Semiconductor International
November 2000
Rev. A, November 2000
F
QFET
TM
FQB3N25 / FQI3N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
Features
2.8A, 250V, R
DS(on)
= 2.2
@V
GS
= 10 V
Low gate charge ( typical 4.0 nC)
Low Crss ( typical 4.7 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
! "
!
!
S
!
"
"
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
FQB3N25 / FQI3N25
250
2.8
1.77
11.2
±
30
40
2.8
4.5
5.5
3.13
45
0.36
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
2.78
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
D
G
D
2
-PAK
FQB Series
I
2
-PAK
FQI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
FQI3N25 250V N-Channel MOSFET
FQB3N30 300V N-Channel MOSFET
FQI3N30 300V N-Channel MOSFET
FQB3N40 400V N-Channel MOSFET(漏源電壓為400V的N溝道增強(qiáng)型MOSFET)
FQI3N40 400V N-Channel MOSFET(漏源電壓為400V的N溝道增強(qiáng)型MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQB3N25TM 功能描述:MOSFET N-CH/250V/2.8A/2.2OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB3N30 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:300V N-Channel MOSFET
FQB3N30TM 功能描述:MOSFET 300V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQB3N40 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:400V N-Channel MOSFET
FQB3N40TM 功能描述:MOSFET N-CH/400V/2.5A/3.4OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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