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參數(shù)資料
| 型號(hào)： | FQB95N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized Power MOSFET |
| 中文描述： | 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大小： | 229K |
| 代理商： | FQB95N03L |
2002 Fairchild Semiconductor Corporation
December 2002
FQB95N03L Rev. B1
F
FQB95N03L
N-Channel Logic Level PWM Optimized Power MOSFET
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0064
(Typ), V
GS
= 10V
r
DS(ON)
= 0.010
(Typ), V
GS
= 5V
Q
g
(Typ) = 24nC, V
GS
= 5V
Q
gd
(Typ) = 8nC
C
ISS
(Typ) = 2600pF
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
16
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
75
48
15
A
A
A
A
W
Figure 4
80
0.65
-55 to 150
P
D
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
1.5
62
43
o
C/W
o
C/W
o
C/W
Device Marking
FQB95N03L
Device
FQB95N03L
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
S
G
D
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQB95N03LTM | 功能描述:MOSFET 30V N-Channel Logic PWM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB9N08 | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:80V N-Channel MOSFET |
| FQB9N08L | 制造商:FAIRCHILD 制造商全稱(chēng):Fairchild Semiconductor 功能描述:80V LOGIC N-Channel MOSFET |
| FQB9N08LTM | 功能描述:MOSFET 80V N-Channel QFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQB9N08TM | 功能描述:MOSFET 80V N-Channel QFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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