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參數(shù)資料
| 型號： | FQB95N03L |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PWM Optimized Power MOSFET |
| 中文描述： | 75 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | TO-263AB, 3 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 229K |
| 代理商： | FQB95N03L |
2002 Fairchild Semiconductor Corporation
FQB95N03L Rev. B1
F
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(5)
Total Gate Charge at 5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 4.5V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Unclamped Inductive Switching
t
AV
Avalanche Time
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 25V
V
GS
= 0V
V
GS
=
±
16V
30
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 150
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 75A, V
GS
= 10V
I
D
= 48A, V
GS
= 5V
1
-
-
-
3
V
r
DS(ON)
Drain to Source On Resistance
0.0064
0.010
0.008
0.012
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
-
2600
520
225
45
24
2.6
7
8
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DD
= 15V
I
D
= 48A
I
g
= 1.0mA
78
46
4.0
-
-
V
DD
= 15V, I
D
= 15A
V
GS
= 5V, R
GS
= 6.2
-
-
-
-
-
-
-
122
-
-
-
-
100
ns
ns
ns
ns
ns
ns
15
67
35
32
-
V
DD
= 15V, I
D
= 14A
V
GS
= 10V, R
GS
= 6.2
-
-
-
-
-
-
-
8
71
-
-
-
-
142
ns
ns
ns
ns
ns
ns
40
64
31
-
I
D
= 3.2A, L = 3.0mH
215
-
-
μ
s
V
SD
Source to Drain Diode Voltage
I
SD
= 48A
I
SD
= 20A
I
SD
= 48A, dI
SD
/dt = 100A/
μ
s
I
SD
= 48A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
85
160
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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