參數(shù)資料
型號(hào)： FQT7N10
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 100V N-Channel MOSFET
中文描述： 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 638K
代理商： FQT7N10
Rev. A, May 2001
F
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 26mH, I
= 1.7A, V
DD
= 25V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
7.3A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
100
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.1
--
V/°C
V
DS
= 100 V, V
GS
= 0 V
V
DS
= 80 V, T
C
= 125°C
V
GS
= 25 V, V
DS
= 0 V
V
GS
= -25 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
1
10
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 0.85 A
--
0.28
0.35
V
DS
= 40 V, I
D
= 0.85 A
--
1.85
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
190
60
10
250
75
13
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 50 V, I
D
= 7.3 A,
R
G
= 25
--
--
--
--
--
--
--
7
24
13
19
5.8
1.4
2.5
25
60
35
50
7.5
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 80 V, I
D
= 7.3 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
70
150
1.7
6.8
1.5
--
--
A
A
V
ns
nC
V
GS
= 0 V, I
S
= 1.7 A
V
GS
= 0 V, I
S
= 7.3 A,
dI
F
/ dt = 100 A/
μ
s
相關(guān)PDF資料
PDF描述
FQT7P06 60V P-Channel MOSFET
FQU10N20L 200V LOGIC N-Channel MOSFET
FQU12N20 200V N-Channel MOSFET
FQU12N20L 200V LOGIC N-Channel MOSFET
FQU12P10 100V P-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FQT7N10L 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET
FQT7N10LTF 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FQT7N10LTF 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 100V 1.7A SOT-223
FQT7N10LTF-CUT TAPE 制造商:FAIRCHILD 功能描述:FQT7N10L Series 100 V 0.35 Ohm Surface Mount N-Channel Mosfet - SOT-223
FQT7N10TF 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*