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參數(shù)資料
| 型號： | FQT7N10 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel MOSFET |
| 中文描述： | 1.7 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 638K |
| 代理商： | FQT7N10 |
Rev. A, May 2001
2001 Fairchild Semiconductor Corporation
F
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
-1
10
0
25
℃
150
℃
※
Notes :
1. V
GS
= 0V
2. 250
μ
s Pulse Test
I
D
V
SD
, Source-Drain Voltage [V]
2
4
6
8
10
10
-1
10
0
※
Notes :
DS
=s Pulse Test
1. V
μ
-55
℃
150
℃
25
℃
I
D
V
GS
, Gate-Source Voltage [V]
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
V
DS
= 50V
V
DS
= 80V
※
Note : I
D
= 7.3 A
V
G
,
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
100
200
300
400
500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
3
6
I
D
, Drain Current [A]
9
12
15
18
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
※
Note : T
J
= 25
℃
V
GS
= 20V
V
GS
= 10V
R
D
]
D
10
-1
10
0
10
1
10
0
GS
V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※
Notes :
μ
s Pulse Test
2. T
C
= 25
℃
I
D
,
V
DS
, Drain-Source Voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FQT7N10L | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:100V LOGIC N-Channel MOSFET |
| FQT7N10LTF | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FQT7N10LTF | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 100V 1.7A SOT-223 |
| FQT7N10LTF-CUT TAPE | 制造商:FAIRCHILD 功能描述:FQT7N10L Series 100 V 0.35 Ohm Surface Mount N-Channel Mosfet - SOT-223 |
| FQT7N10TF | 功能描述:MOSFET 100V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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