參數(shù)資料
型號(hào): FSB619
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號(hào)晶體管
英文描述: NPN Low Saturation Transistor
中文描述: 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SUPERSOT-3
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 27K
代理商: FSB619
*Device mounted on FR-4 PCB 4.5” X 5”; mounting pad 0.02 in
2
of 2oz copper.
NPN Low Saturation Transistor
(continued)
-
100
I
C
= 50 mA,V
CE
= 10 V, f=100MHz
Transition Frequency
f
T
pF
30
V
CB
= 10 V, I
E
= 0, f = 1MHz
Output Capacitance
C
obo
SMALL SIGNAL CHARACTERISTICS
V
1
I
C
= 2 A, V
CE
= 2 V
Base-Emitter On Voltage
V
BE(on)
V
1
I
C
= 2 A, I
B
= 50 mA
Base-Emitter Saturation Voltage
V
BE(sat)
mV
20
235
320
I
C
= 100 mA, I
B
= 10 mA
I
C
= 1 A, I
B
= 10 mA
I
C
= 2 A, I
B
= 50 mA
Collector-Emitter Saturation Voltage
V
CE(sat)
-
200
300
200
100
I
C
= 10 mA, V
CE
= 2V
I
C
= 200 mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 2A, V
CE
= 2V
DC Current Gain
h
FE
ON CHARACTERISTICS
*
nA
100
V
CES
= 40 V
Collector Emitter Cutoff Current
I
CES
nA
100
V
EB
= 4V
Emitter Cutoff Current
I
EBO
nA
100
V
CB
= 40 V
Collector Cutoff Current
I
CBO
V
5
I
E
= 100
μ
A
Emitter-Base Breakdown Voltage
BV
EBO
V
50
I
C
= 100
μ
A
Collector-Base Breakdown Voltage
BV
CBO
V
50
I
C
= 10 mA
Collector-Emitter Breakdown Voltage
BV
CEO
OFF CHARACTERISTICS
Units
Max
Min
Test Conditions
Parameter
Symbol
Electrical Characteristics
T
A = 25°C unless otherwise noted
*Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
Page 2 of 2
F
fsb619.lwpPrNA 7/10/98 revC
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參數(shù)描述
FSB619_Q 功能描述:兩極晶體管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB649 功能描述:兩極晶體管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB649_Q 功能描述:兩極晶體管 - BJT NPN Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB660 功能描述:兩極晶體管 - BJT PNP Transistor Low Saturation RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
FSB660_01 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Low Saturation Transistor