參數(shù)資料
型號(hào)： FSX027WF
廠商： SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
英文描述： General Purpose GaAs FET
中文描述： 通用砷化鎵場(chǎng)效應(yīng)管
文件頁數(shù)： 1/4頁
文件大小： 108K
代理商： FSX027WF
1
Edition 1.2
July 1999
FSX027WF
General Purpose GaAs FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
V
W
°
C
°
C
VGS
PT
TSTG
TCH
VDS
Rating
Condition
Unit
12
-5
1.5
Tc = 25
°
C
-65 to 175
175
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000
.
3. The operating channel temperature (Tch) should not exceed 145
°
C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
70
110
150
-
100
-
-0.7
-
-1.2
-1.7
2.5
-
-5.0
-
-
-
9.5
-
VDS = 3V, IDS = 5.4mA
VDS = 3V, IDS = 30mA
f = 8GHz
f = 4GHz
f = 8GHz
f = 12GHz
f = 4GHz
f = 8GHz
f = 12GHz
VDS = 8V,
IDS = 0.7IDSS
VDS = 8V,
IDS = 0.7IDSS
Channel to Case
G.C.P.: Gain Compression Point
VDS = 3V, IDS = 54mA
VDS = 3V, VGS = 0V
IGS = -5.4
μ
A
mA
mS
V
dB
-
24.5
24.5
23.5
14.0
10.0
6.5
-
-
-
-
-
-
dBm
dBm
dBm
dB
dB
dB
°
C/W
23.5
-
-
9.0
-
-
70
100
dB
V
gm
Vp
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
CASE STYLE: WF
DESCRIPTION
The FSX027WF is a general purpose GaAs FET designed for medium
power applications up to the 12GHz. These devices have a wide
dynamic range and are suitable for use in medium power, wide band,
linear drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
High Power Gain: G1dB=10dB(Typ.)@8.0GHz
Hermetic Metal/Ceramic Package
Proven Reliability
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