參數(shù)資料
型號(hào)： FZ1200R33KF2C
廠商： INFINEON TECHNOLOGIES AG
元件分類： IGBT 晶體管
英文描述： IGBT-Wechselrichter / IGBT-inverter
中文描述： 2000 A, 3300 V, N-CHANNEL IGBT
封裝： MODULE-9
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 253K
代理商： FZ1200R33KF2C
1
Technische Information / technical information
FZ1200R33KF2C
IGBT-modules
IGBT-Module
prepared by: Jürgen Biermann
approved by: Christoph Lübke
date of publication: 3/18/2003
revision: 2.0
Vorlufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
TY = -25°C
V
3300
3300
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C
T = 25°C
I òó
I
1200
2000
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms, T = 80°C
I￠
2400
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C
Púóú
14,5
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
min.
typ.
max.
I = 1200 A, V = 15 V, TY = 25°C
I = 1200 A, V = 15 V, TY = 125°C
V ùèú
3,40
4,30
4,25
5,00
V
V
Gate-Schwellenspannung
gate threshold voltage
I = 120 mA, V = V, TY = 25°C
Vúì
4,2
5,1
6,0
V
Gateladung
gate charge
V = -15 V ... +15 V, V = 1800V
Q
22,0
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
0,42
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
150
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
8,00
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 3300 V, V = 0 V, TY = 25°C
I
0,15
12
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V, Róò = 0,91 , C = 220 nF, TY = 25°C
V = ±15 V, Róò = 0,91 , C = 220 nF, TY = 125°C
tá óò
0,28
0,28
μs
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V, Róò = 0,91 , C = 220 nF, TY = 25°C
V = ±15 V, Róò = 0,91 , C = 220 nF, TY = 125°C
t
0,18
0,20
μs
μs
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V, Ró = 1,2 , C = 220 nF, TY = 25°C
V = ±15 V, Ró = 1,2 , C = 220 nF, TY = 125°C
tá ó
1,55
1,70
μs
μs
Fallzeit (induktive Last)
fall time (inductive load)
I = 1200 A, V = 1800 V
V = ±15 V, Ró = 1,2 , C = 220 nF, TY = 25°C
V = ±15 V, Ró = 1,2 , C = 220 nF, TY = 125°C
t
0,20
0,20
μs
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 1200 A, V = 1800 V, L = 40 nH
V = ±15 V, Róò = 0,91 , C = 220 nF, TY = 25°C
V = ±15 V, Róò = 0,91 , C = 220 nF, TY = 125°C
Eóò
1400
2200
mJ
mJ
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 1200 A, V = 1800 V, L = 40 nH
V = ±15 V, Ró = 1,2 , C = 220 nF, TY = 25°C
V = ±15 V, Ró = 1,2 , C = 220 nF, TY = 125°C
Eó
1300
1550
mJ
mJ
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TYù125°C, V = 2500 V, Vèà = V -Lù ·di/dt
I
6000
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
8,50 K/kW
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
6,00
K/kW
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZ1200R33KF2C-B5 制造商:EUPEC 制造商全稱:EUPEC 功能描述:IGBT-Wechselrichter / IGBT-inverter
FZ1200R33KL2 制造商:EUPEC 制造商全稱:EUPEC 功能描述:Hochstzulassige Werte / Maximum rated values
FZ1200R33KL2C 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ1200R33KL2C_B5 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ1200R33KL2C-B5 制造商:EUPEC 制造商全稱:EUPEC 功能描述:IGBT-Wechselrichter / IGBT-inverter
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