- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375994 > FZT969 (Zetex Semiconductor) SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | FZT969 |
| 廠商： | Zetex Semiconductor |
| 英文描述： | SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR |
| 中文描述： | 采用SOT223 NPN硅平面高電流（高性能）晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 27K |
| 代理商： | FZT969 |
FZT869
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
60
120
V
I
C
=100
μ
A
Collector-Emitter Breakdown
Voltag
V
(BR)CER
60
120
V
I
C
=1
μ
A, RB
≤
1k
Collector-Emitter Breakdown
Voltage
V
(BR)CEO
25
35
V
I
C
=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
6
8
V
I
E
=100
μ
A
Collector Cut-Off Current
I
CBO
50
1
nA
μ
A
V
CB
=50V
V
CB
=50V, T
amb
=100°C
Collector Cut-Off Current
I
CER
R
≤
1k
50
1
nA
μ
A
V
CB
=50V
V
CB
=50V, T
amb
=100°C
Emitter Cut-Off Current
I
EBO
10
nA
V
EB
=6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
35
67
168
50
110
215
350
mV
mV
mV
mV
I
C
=0.5A, I
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=2A, I
B
=10mA*
I
C
=6.5A, I
B
=150mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.2
V
I
C
=6.5A, I
B
=300mA
Base-Emitter Turn-On Voltage
V
BE(on)
1.13
V
I
C
=6.5A, V
CE
=1V*
Static Forward
Current Transfer Ratio
h
FE
300
300
200
40
450
450
300
100
I
C
=10mA, V
=1V
I
C
=1A, V
CE
=1V*
I
C
=7A, V
CE
=1V*
I
C
=20A, V
CE
=2V*
Transition Frequency
f
T
100
MHz
I
=100mA, V
CE
=10V
f=50MHz
Output Capacitance
C
obo
70
pF
V
CB
=10V, f=1MHz*
Switching Times
t
on
t
off
60
680
ns
ns
I
C
=1A, I
=100mA
I
B2
=100mA, V
CC
=10V
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 272
3 - 271
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FZT968 | PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) POWER TRANSISTOR |
| FZTA14 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle |
| FZTA42 | NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR |
| G7S-3A3B-DC24 | |
| G7S-4A2B-DC24 | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZTA14 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR DARLINGTON TRANSISTOR |
| FZTA14TA | 功能描述:達林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZTA14TA-CUT TAPE | 制造商:DIODES 功能描述:FZTA14 Series 30 V 1 A NPN Silicon Planar Darlington Transistor - SOT-223 |
| FZTA14TC | 功能描述:達林頓晶體管 NPN Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZTA42 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Silicon Planar High Voltage Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。