參數(shù)資料
型號: GF4810
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 10A條(?。﹟蘇
文件頁數(shù): 1/5頁
文件大?。?/td> 87K
代理商: GF4810
T
RENCH
G
EN
F
ET
Features
Enhancement mode MOSFET and Schottky Diode in a
compact package
Advanced Trench Process Technology and high Density
Cell Design for Ultra Low On-Resistance
Suitable for Low Voltage DC/DC Converters
High performance Schottky diode with low V
F
and high I
F
Mechanical Data
Case:
SO-8 molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Mounting Position:
Any
Weight:
0.5g
GF4810
N-Channel MOSFET & Schottky Diode
MOSFET:V
DS
30V
R
DS(ON)
13.5
m
I
D
10A
Schottky:V
R
30V
V
F
0.53V
I
F
4.0A
NewProduct
4/27/01
5
1
4
0.244 (6.20)
0.228 (5.79)
8
0.157 (3.99)
0.150 (3.81)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
0.009 (0.23)
0.004 (0.10)
0.197 (5.00)
0.189 (4.80)
0.069 (1.75)
0.053 (1.35)
0.019 (0.48)
°
0
°
8
°
0.050(1.27)
0.016 (0.41)
0.009 (0.23)
0.007 (0.18)
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
A
= 25
°
C unless otherwise noted)
MOSFET
Parameter
Drain-Source Voltage
Symbol
V
DS
Limit
30
±20
Unit
V
Gate-Source Voltage
V
GS
Continuous Drain Current
(T
J
= 150
°
C)
(1)
T
A
= 25
°
C
T
A
= 70
°
C
I
D
10
8
Pulsed Drain Current
Continuous Source Current (MOSFET Diode Conduction)
(1)
Maximum Power Dissipation
(1)
I
DM
50
A
I
S
2.3
T
A
= 25
°
C
T
A
= 70
°
C
P
D
2.3
1.5
W
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-to-Ambient
(1)
Schottky
Reverse Voltage
T
J
, T
stg
55 to 150
°
C
R
θ
JA
55
°
C/W
V
R
30
V
Maximum Power Dissipation
(1)
T
A
= 25
°
C
T
A
= 70
°
C
P
D
1.4
0.9
W
Average Forward Current
(1)
I
F
4.0
A
Pulsed Forward Current
I
FM
50
Operating Junction and Storage Temperature Range
Maximum Thermal Resistance Junction-to-Ambient
(1)
T
J
, T
stg
55 to 150
°
C
R
θ
JA
90
°
C/W
Notes:
(1) Surface Mounted on FR4 Board, t
10 sec.
SO-8
A
1
K
8
D
7
D
6
D
5
S
2
S
3
G
4
0.245 (6.22)
Min.
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
0.165 (4.19)
0.155 (3.94)
0.05 (1.27)
0.04 (1.02)
Mounting Pad
Layout
相關(guān)PDF資料
PDF描述
GF4936 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO
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GF6968E TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | TSSOP
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