參數(shù)資料
型號(hào): GF4810
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 10A I(D) | SO
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直| 10A條(丁)|蘇
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 87K
代理商: GF4810
GF4810
N-Channel MOSFET With Schottky Diode
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
MOSFET
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 0V, V
GS
=
±
20V
30
V
Gate Threshold Voltage
V
GS(th)
1.0
V
Gate-Body Leakage
I
GSS
±
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V, V
GS
= 0V
1
μ
A
V
DS
=30V, V
GS
=0V, T
J
=55
°
C
5
On-State Drain Current
(1)
I
D(on)
V
DS
5V, V
GS
= 10V
20
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 10A
11.5
13.5
m
V
GS
= 4.5V, I
D
= 5A
15.5
20
Forward Transconductance
(1)
Diode Forward Voltage
(1)
g
fs
V
DS
= 15V, I
D
= 10A
28
S
V
SD
I
S
= 2.3A, V
GS
= 0V
0.75
1.1
V
Dynamic
Total Gate Charge
Q
g
20
30
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 5V, I
D
= 10A
5
nC
Gate-Drain Charge
Q
gd
7
Turn-On Delay Time
t
d(on)
10
30
Rise Time
t
r
V
DD
= 15V, R
L
= 15
I
D
1A, V
GEN
=10V, R
G
=6
9
15
ns
Turn-Off Delay Time
t
d(off)
47
90
Fall Time
t
f
13
40
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
1850
Output Capacitance
C
oss
315
pF
Reverse Transfer Capacitance
Schottky
C
rss
150
Diode Forward Voltage
(1)
V
F
I
F
= 3.0A
0.495
0.53
V
I
F
= 2.3A, T
J
= 125
°
C
0.420
0.47
Reverse Leakage Current
I
R
V
R
= 30V
0.015
0.100
mA
V
R
= 30V, T
J
= 125
°
C
6.5
20
Notes:
(1) Pulse test; pulse width
300
μ
s, duty cycle
2%
相關(guān)PDF資料
PDF描述
GF4936 TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 5.8A I(D) | SO
GF4953 TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 30V V(BR)DSS | 4.9A I(D) | SO
GF6968A TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | 6.2A I(D) | TSSOP
GF6968AD TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 6A I(D) | CHIP
GF6968E TRANSISTOR | MOSFET | COMMON DRAIN | N-CHANNEL | 20V V(BR)DSS | TSSOP
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