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參數資料
| 型號： | GP2400ESM18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hi-Reliability Single Switch IGBT Module |
| 中文描述： | 2400 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數： | 2/12頁 |
| 文件大?。?/td> | 169K |
| 代理商： | GP2400ESM18 |
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
2/12
Test Conditions
DC junction to case
DC junction to case
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Parameter
Thermal resistance - transistor
Thermal resistance - diode
Thermal resistance - case to heatsink (per module)
Junction temperature
Storage temperature range
Screw torque
THERMAL AND MECHANICAL RATINGS
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to Absolute Maximum Ratings for extended periods may affect device reliability.
T
case
= 25C unless stated otherwise.
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
V
isol
Test Conditions
V
GE
= 0V
-
DC, T
case
= 75C, T
j
= 125C
1ms, T
case
= 75C, T
j
= 125C
T
case
= 25C (Transistor), T
j
= 150C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Units
V
V
A
A
kW
V
Max.
1200
±
20
2400
4800
20.8
2500
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. power dissipation
Isolation voltage
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-h)
T
j
T
stg
-
Units
C/kW
C/kW
C/kW
C
C
C
Nm
Nm
Nm
Max.
6
13.3
6
150
125
125
5
2
10
Min.
-
-
-
-
-
–40
-
-
-
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GP2400ESS18 | 制造商:n/a 功能描述:IGBT Module |
| GP24015 | 制造商:Nordic Power i Stromstad 功能描述:Bulk |
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| GP24030 | 制造商:Nordic Power i Stromstad 功能描述:Bulk |
| GP24-047X0438-50 | 制造商:GROOV-PIN 功能描述: |
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