參數(shù)資料
型號: GP2400ESM18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類: 功率晶體管
英文描述: Hi-Reliability Single Switch IGBT Module
中文描述: 2400 A, 1800 V, N-CHANNEL IGBT
文件頁數(shù): 7/12頁
文件大?。?/td> 169K
代理商: GP2400ESM18
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/12
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
200
0
400
600
800
1000
1200
1400
1600
0
400
800
Collector current, I
C
- (A)
1200
1600
2000
2400
T
o
Conditions:
T
case
= 25C
V
ce
= 600V
V
ge
= 15V
A: R
g
= 7
B: R
g
= 4.3
C: R
g
= 3.3
A
B
C
0
200
400
600
800
1000
1200
1400
1600
1800
0
400
800
Collector current, I
C
- (A)
1200
1600
2000
2400
T
o
Conditions:
T
case
= 125'C
V
ce
= 600V
V
ge
= 15V
A: R
g
= 7
B: R
g
= 4.3
C: R
g
= 3.3
A
B
C
0
20
40
60
80
100
120
140
160
0
400
800
Collector current, I
C
- (A)
1200
1600
2000
2400
D
o
Conditions:
V
CE
= 600V
V
GE
= 15V
R
g
= 3.3
T
case
= 125C
T
case
= 25C
0
500
1000
1500
2000
2500
3000
0
400
800
Collector current, I
C
- (A)
1200
1600
2000
2400
S
t
d(off)
t
f
t
d(on)
t
r
Conditions:
T
case
= 125C
V
ce
= 600V
V
ge
= 15V
R
g
= 3.3
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