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參數(shù)資料
| 型號： | GP2400ESM18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Hi-Reliability Single Switch IGBT Module |
| 中文描述： | 2400 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 4/12頁 |
| 文件大小： | 169K |
| 代理商： | GP2400ESM18 |
GP2400ESM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
4/12
Units
ns
ns
mJ
ns
ns
mJ
μ
C
Max.
-
-
-
-
-
-
-
Typ.
2300
400
820
2600
1100
490
200
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 80nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
For definition of switching waveforms, refer to figure 3 and 4.
T
case
= 25C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
Units
ns
ns
mJ
ns
ns
mJ
μ
C
Max.
-
-
-
-
-
-
-
Typ.
2570
400
980
2650
1000
620
400
Min.
-
-
-
-
-
-
-
Test Conditions
I
C
= 2400A
V
GE
=
±
15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 3.3
L ~ 80nH
I
F
= 2400A, V
R
= 50% V
CES
,
dI
F
/dt = 2000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case
= 125C unless stated otherwise.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GP2400ESS18 | 制造商:n/a 功能描述:IGBT Module |
| GP24015 | 制造商:Nordic Power i Stromstad 功能描述:Bulk |
| GP2401ESM18 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Hi-Reliability Single Switch Low VCE(SAT) IGBT Module |
| GP24030 | 制造商:Nordic Power i Stromstad 功能描述:Bulk |
| GP24-047X0438-50 | 制造商:GROOV-PIN 功能描述: |
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