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參數(shù)資料
| 型號： | GS816036BGT-300 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 |
| 封裝： | LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 8/24頁 |
| 文件大小： | 444K |
| 代理商： | GS816036BGT-300 |
GS816018/32/36BT-300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 2/2005
16/24
2004, GSI Technology
Notes:
1. IDD and IDDQ apply to any combination of VDD3, VDD2, VDDQ3, and VDDQ2 operation.
2. All parameters listed are worst case scenario.
Operating Currents
Parameter
Test Conditions
Mode
Symbol
-300
-250
-200
-150
Unit
0
to
°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
0
to
70°C
–40
to
85°C
Operating
Current
Device Selected;
All other inputs
≥VIH or ≤ VIL
Output open
(x32/
x36)
Pipeline
IDD
IDDQ
345
45
355
45
290
40
300
40
240
30
250
30
190
20
200
20
mA
Flow Through
IDD
IDDQ
240
30
250
30
220
20
230
20
190
15
200
15
175
15
185
15
mA
(x18)
Pipeline
IDD
IDDQ
310
25
320
25
260
20
270
20
215
15
225
15
170
15
180
15
mA
Flow Through
IDD
IDDQ
215
15
225
15
200
10
210
10
175
10
185
10
160
10
170
10
mA
Standby
Current
ZZ
≥ VDD – 0.2 V
—
Pipeline
ISB
40
50
40
50
40
50
40
50
mA
Flow Through
ISB
40
50
40
50
40
50
40
50
mA
Deselect
Current
Device Deselected;
All other inputs
≥ VIH or ≤ VIL
—
Pipeline
IDD
85
90
85
90
75
80
60
65
mA
Flow Through
IDD
60
65
60
65
50
55
50
55
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816036BT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-150IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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