- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299161 > GS816036BGT-300 (GSI TECHNOLOGY) 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 PDF資料下載
參數(shù)資料
| 型號： | GS816036BGT-300 |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 512K X 36 CACHE SRAM, 5.3 ns, PQFP100 |
| 封裝： | LEAD FREE, TQFP-100 |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 444K |
| 代理商： | GS816036BGT-300 |
GS816018/32/36BT-300/250/200/150
Preliminary
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.02 2/2005
17/24
2004, GSI Technology
Notes:
1. These parameters are sampled and are not 100% tested.
2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times
as specified above.
AC Electrical Characteristics
Parameter
Symbol
-300
-250
-200
-150
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Pipeline
Clock Cycle Time
tKC
3.3
—
4.0
—
5.0
—
6.7
—
ns
Clock to Output Valid
tKQ
—
2.5
—
2.5
—
3.0
—
3.8
ns
Clock to Output Invalid
tKQX
1.5
—
1.5
—
1.5
—
1.5
—
ns
Clock to Output in Low-Z
tLZ1
1.5
—
1.5
—
1.5
—
1.5
—
ns
Setup time
tS
1.0
—
1.2
—
1.4
—
1.5
—
ns
Hold time
tH
0.1
—
0.2
—
0.4
—
0.5
—
ns
Flow Through
Clock Cycle Time
tKC
5.3
—
5.5
—
6.5
—
7.5
—
ns
Clock to Output Valid
tKQ
—
5.3
—
5.5
—
6.5
—
7.5
ns
Clock to Output Invalid
tKQX
2.0
—
2.0
—
2.0
—
2.0
—
ns
Clock to Output in Low-Z
tLZ1
2.0
—
2.0
—
2.0
—
2.0
—
ns
Setup time
tS
1.4
—
1.5
—
1.5
—
1.5
—
ns
Hold time
tH
0.4
—
0.5
—
0.5
—
0.5
—
ns
Clock HIGH Time
tKH
1.0
—
1.3
—
1.3
—
1.5
—
ns
Clock LOW Time
tKL
1.2
—
1.5
—
1.5
—
1.7
—
ns
Clock to Output in
High-Z
tHZ1
1.5
2.5
1.5
2.5
1.5
3.0
1.5
3.0
ns
G to Output Valid
tOE
—
2.5
—
2.5
—
3.0
—
3.8
ns
G to output in Low-Z
tOLZ1
0
—
0
—
0
—
0
—
ns
G to output in High-Z
tOHZ1
—
2.5
—
2.5
—
3.0
—
3.8
ns
ZZ setup time
tZZS2
5
—
5
—
5
—
5
—
ns
ZZ hold time
tZZH2
1
—
1
—
1
—
1
—
ns
ZZ recovery
tZZR
20
—
20
—
20
—
20
—
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS816037T-133I | 512K X 36 CACHE SRAM, 3.5 ns, PQFP100 |
| GS8160E18AT-300 | 1M X 18 CACHE SRAM, 5 ns, PQFP100 |
| GS8160V18AGT-150IT | 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 |
| GS8160V36BGT-150I | 512K X 36 CACHE SRAM, 7.5 ns, PQFP100 |
| GS8160ZV18AGT-150I | 1M X 18 ZBT SRAM, 7.5 ns, PQFP100 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS816036BT-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-150IV | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-150V | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS816036BT-200 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。