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參數(shù)資料
| 型號(hào)： | GS8161E18GT-166I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 1M X 18 CACHE SRAM, 7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 1/36頁 |
| 文件大?。?/td> | 935K |
| 代理商： | GS8161E18GT-166I |
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GS8161E18(T/D)/GS816132(D)/GS816136(T/D)
1M x 18, 512K x 32, 512K x 36
18Mb Sync Burst SRAMs
250 MHz–133 MHz
2.5 V or 3.3 V VDD
2.5 V or 3.3 V I/O
100-Pin TQFP & 165-Bump BGA
Commercial Temp
Industrial Temp
Rev: 2.14 3/2005
1/36
1999, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Features
FT pin for user-configurable flow through or pipeline
operation
Dual Cycle Deselect (DCD) operation
IEEE 1149.1 JTAG-compatible Boundary Scan
2.5 V or 3.3 V +10%/–10% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 100-lead TQFP and 165-bump BGA
packages
Functional Description
Applications
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a
18,874,368-bit high performance synchronous SRAM with a 2-bit
burst address counter. Although of a type originally developed for
Level 2 Cache applications supporting high performance CPUs, the
device now finds application in synchronous SRAM applications,
ranging from DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control inputs
(ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are
synchronous and are controlled by a positive-edge-triggered clock
input (CK). Output enable (G) and power down control (ZZ) are
asynchronous inputs. Burst cycles can be initiated with either ADSP
or ADSC inputs. In Burst mode, subsequent burst addresses are
generated internally and are controlled by ADV. The burst address
counter may be configured to count in either linear or interleave order
with the Linear Burst Order (LBO) input. The Burst function need not
be used. New addresses can be loaded on every cycle with no
degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the user
via the FT mode pin (Pin 14). Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the Data
Output Register. Holding FT high places the RAM in Pipeline mode,
activating the rising-edge-triggered Data Output Register.
DCD Pipelined Reads
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) is a DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. SCD (Single
Cycle Deselect) versions are also available. DCD SRAMs pipeline
disable commands to the same degree as read commands. DCD
RAMs hold the deselect command for one full cycle and then begin
turning off their outputs just after the second rising edge of clock.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable (BW)
input combined with one or more individual byte write signals (Bx).
In addition, Global Write (GW) is available for writing all bytes at one
time, regardless of the Byte Write control inputs.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High) of
the ZZ signal, or by stopping the clock (CK). Memory data is retained
during Sleep mode.
Core and Interface Voltages
The GS8161E18(T/D)/GS8161E32(D)/GS8161E36(T/D) operates on
a 2.5 V or 3.3 V power supply. All input are 3.3 V and 2.5 V
compatible. Separate output power (VDDQ) pins are used to decouple
output noise from the internal circuits and are 3.3 V and 2.5 V
compatible.
Parameter Synopsis
-250
-225
-200
-166
-150
-133
Unit
Pipeline
3-1-1-1
tKQ
tCycle
2.5
4.0
2.7
4.4
3.0
5.0
3.4
6.0
3.8
6.7
4.0
7.5
ns
3.3 V
Curr (x18)
Curr (x36)
280
330
255
300
230
270
200
230
185
215
165
190
mA
2.5 V
Curr (x18)
Curr (x36)
275
320
250
295
230
265
195
225
180
210
165
185
mA
Flow Through
2-1-1-1
tKQ
tCycle
5.5
6.0
6.5
7.0
7.5
8.5
ns
3.3 V
Curr (x18)
Curr (x36)
175
200
165
190
160
180
150
170
145
165
135
150
mA
2.5 V
Curr (x18)
Curr (x36)
175
200
165
190
160
180
150
170
145
165
135
150
mA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS8161E18T-133 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
| GS8161E18T-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs |
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