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參數(shù)資料
| 型號： | GS820H32GT-138I |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 64K X 32 CACHE SRAM, 9.7 ns, PQFP100 |
| 封裝： | TQFP-100 |
| 文件頁數(shù)： | 2/23頁 |
| 文件大?。?/td> | 342K |
| 代理商： | GS820H32GT-138I |
Rev: 1.03 2/2000
10/23
1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
D
GS820H32T/Q-150/138/133/117/100/66
Note: This parameter is sample tested.
Notes:
1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temper-
ature air flow, board density, and PCB thermal resistance.
2. SCMI G-38-87.
3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1.
4. For x18 configuration, consult factory.
Capacitance
(TA=25oC, f=1MHZ, VDD=3.3V)
Parameter
Symbol
Test conditions
Typ.
Max.
Unit
Control Input Capacitance
CI
VDD=3.3V
3
4
pF
Input Capacitance
CIN
VIN=0V
4
5
pF
Output Capacitance
COUT
VOUT=0V
6
7
pF
Package Thermal Characteristics
Rating
Layer Board
Symbol
TQFP Max
QFP Max
Unit
Notes
Junction to Ambient (at 200 lfm)
single
RΘJA
40
TBD
°C/W
1,2,4
Junction to Ambient (at 200 lfm)
four
RΘJA
24
TBD
°C/W
1,2,4
Junction to Case (TOP)
RΘJC
9
TBD
°C/W
3,4
20% tKC
VSS-2.0V
50%
VSS
VIH
Undershoot Measurement and Timing
Overshoot Measurement and Timing
20% tKC
VDD+-2.0V
50%
VDD
VIL
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| GS820H32Q-133 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
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| GS820H32Q-138I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x32 Fast Synchronous SRAM |
| GS820H32Q-150 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:64K x 32 2M Synchronous Burst SRAM |
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