參數(shù)資料
型號： GS840E18A
廠商： GSI TECHNOLOGY
英文描述： 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
中文描述： 4Mb的（256 × 18位）同步突發(fā)靜態(tài)存儲器（4分位（256 × 18位）同步靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計(jì)數(shù)器））
文件頁數(shù)： 31/31頁
文件大?。?/td> 941K
代理商： GS840E18A
Rev: 1.07 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
31/31
1999, Giga Semiconductor, Inc.
Preliminary
GS840E18/32/36AT/B-200/180/166/150/100
Revision History
Rev. Code: Old;
New
Types of Changes
Format or Content
Page /Revisions;Reason
GS840E18/32/36 Rev 1.02c 5/
1999;
GS840E18/32/36 2.00 8/1999D
Format/Typos
Document/Continued changing to new format.
Content
Added Fine Pitch BGA Package.
GS840E18/32/362.00 8/
1999;GS840E18/32/362.01 9/
1999E
Format/Typos
Took “E” out of 840HE...in Core and Interface Voltages.
Pin outs/New small caps format.
Timing Diagrams/New format.
Block Diagrams/New small caps format.
Pin outs/x32 & x36 TQFP/Changed pin 72 from DQA3 to
DQB3.
Pin Description/Rearranged Address Inputs to match order on
TQFP Pinout.
TQFP Package Diagram/Corrected Dimension D Max from
20.1 to 22.1.
Took out Fine Pitch BGA Package. Package change in
progress.
Content
GS840E18/32/362.01 9/
1999E;GS840E18/32/362.02
GS840E18/32/362.0210-11/
1999;GS840E18/32/362.032/
2000G
Format
New GSI Logo
Took “Pin” out of heading for consistency.
GS840E18/32/362.032/2000G;
840E18_r1_04
Content
Updated pin description table
840E18_r1_04; 840E18_r1_05
Content
Updated BGA pin description table to meet JEDEC standard
840E18A_r1_05; 840E18A_r1_06
Content/Format
Added “non-A” speed bins to Operating Currents table, AC
Electrical Characteristics table, and Ordering Information
table
Updated format to fit Technical Documentation standards
Updated table on page 1
Updated Operating Currents table on page 18
Updated Electrical Characteristics table on page 19
Updated format to comply with present Technical
Documentation standards
Corrected typos in revision history table on page 31
840E18A_r1_06; 840E18A_r1_07
Content/Format
相關(guān)PDF資料
PDF描述
GS840E32A 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840E36A 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840E18 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840E32 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
GS840E36 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計(jì)數(shù)器）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS840E18AB-100 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18AB-100I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18AB-150 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18AB-150I 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
GS840E18AB-166 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
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