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參數(shù)資料
| 型號： | GS840H32A |
| 廠商： | GSI TECHNOLOGY |
| 英文描述： | 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| 中文描述： | 4Mb的（128K的x 32位）同步突發(fā)靜態(tài)存儲器（4分位（128K的× 32位）同步靜態(tài)隨機(jī)存儲器（帶2位脈沖地址計數(shù)器）） |
| 文件頁數(shù)： | 25/31頁 |
| 文件大小： | 940K |
| 代理商： | GS840H32A |
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Rev: 1.07 12/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com
25/31
1999, Giga Semiconductor, Inc.
Preliminary
GS840H18/32/36AT/B-200/180/166/150/100
Sleep Mode Timing Diagram
Application Tips
Single and Dual Cycle Deselect
SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output
drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there
will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on
dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address
boundary crossings) but greater care must be exercised to avoid excessive bus contention.
CK
ADSP
ADSC
tH
tKH tKL
tKC
tS
ZZ
tZZR
tZZH
tZZS
~
~
~
~
Snooze
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GS840H18A | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H36A | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H32 | 4Mb（128K x 32Bit) Synchronous Burst SRAM(4M位（128K x 32位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H18 | 4Mb（256K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
| GS840H36 | 4Mb（128K x 36Bit) Synchronous Burst SRAM(4M位（128K x 36位）同步靜態(tài)RAM（帶2位脈沖地址計數(shù)器）) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GS840H32AB-100 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840H32AB-100I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
| GS840H32AB-150 | 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays |
| GS840H32AB-150I | 制造商:GSI Technology 功能描述:2.5 OR 3.3V - Trays |
| GS840H32AB-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs |
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