- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370389 > GS84118B-133 x18 Synchronous SRAM PDF資料下載
參數(shù)資料
| 型號： | GS84118B-133 |
| 英文描述： | x18 Synchronous SRAM |
| 中文描述： | x18同步SRAM |
| 文件頁數(shù)： | 1/30頁 |
| 文件大?。?/td> | 584K |
| 代理商： | GS84118B-133 |
當前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁
Rev: 1.05 7/2001
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Trademark Notice (if any) Trademark of Giga Semiconductor, Inc. (GSI Technology).
1/30
1999, Giga Semiconductor, Inc.
GS84118T/B-166/150/133/100
256K x 18 Sync
Cache Tag
166 MHz–100 MHz
8.5 ns–12 ns
3.3 V V
DD
3.3 V and 2.5 V I/O
TQFP, BGA
Commercial Temp
Industrial Temp
Features
3.3 V +10%/–5% core power supply, 2.5 V or 3.3 V I/O
supply
Intergrated data comparator for Tag RAM application
FT mode pin for flow through or pipeline operation
LBO pin for Linear or Interleave (Pentium
TM
and X86) Burst
mode
Synchronous address, data I/O, and control inputs
Synchronous Data Enable (DE)
Asynchronous Output Enable (OE)
Asynchronous Match Output Enable (MOE)
Byte Write (BWE) and Global Write (GW) operation
Three chip enable signals for easy depth expansion
Internal self-timed write cycle
JTAG Test mode conforms to IEEE standard 1149.1
JEDEC-standard 100-lead TQFP package and 119-BGA:
T:TQFP or B: BGA
Functional Description
The GS84118 is a 256K x 18 high performance synchronous
SRAM with integrated Tag RAM comparator. A 2-bit burst
counter is included to provide burst interface with Pentium
TM
and other high performance CPUs. It is designed to be used as
a Cache Tag SRAM, as well as data SRAM. Addresses, data
IOs, match output, chip enables (CE1, CE2, CE3), address
control inputs (ADSP, ADSC, ADV), and write control inputs
(BW1, BW2, BWE, GW, DE) are synchronous and are
controlled by a positive-edge-triggered clock (CLK).
Output Enable (OE), Match Output Enable, and power down
control (ZZ) are asynchronous. Burst can be initiated with
either ADSP or ADSC inputs. Subsequent burst addresses are
generated internally and are controlled by ADV. The burst
sequence is either interleave order (Pentium
TM
or x86) or
linear order, and is controlled by LBO.
Output registers and the Match output register are provided and
controlled by the FT mode pin (Pin 14). Through use of the FT
mode pin, I/O registers can be programmed to perform pipeline
or flow through operation. Flow Through mode reduces
latency.
Byte write operation is performed by using Byte Write Enable
(BWE) input combined with two individual byte write signals
BW1-2. In addition, Global Write (GW) is available for
writing all bytes at one time.
Compare cycles begin as a read cycle with output disabled so
that compare data can be loaded into the data input register.
The comparator compares the read data with the registered
input data and a match signal is generated. The match output
can be either in Pipeline or Flow Through modes controlled by
the FT signal.
Low power (Standby mode) is attained through the assertion of
the ZZ signal, or by stopping the clock (CLK). Memory data is
retained during Standby mode.
JTAG boundary scan interface is provided using IEEE
standard 1149.1 protocol. Four pins—Test Data In (TDI), Test
Data Out (TDO), Test Clock (TCK) and Test Mode Select
(TMS)—are used to perform JTAG function.
The GS84118 operates on a 3.3 V power supply and all inputs/
outputs are 3.3 V- or 2.5 V-LVTTL-compatible. Separate
output (V
DDQ
) pins are used to allow both 3.3 V or 2.5 V IO
interface.
* Pentium is a trademark of Intel Corp.
-166
-150
-133
-100
Pipeline
3-1-1-1
t
cycle
t
KQ
I
DD
6.0 ns
3.5 ns
310 mA
6.6 ns
3.8 ns
275 mA
7.5 ns
4.0 ns
250 mA
10 ns
4.5 ns
190 mA
Flow
Through
2-1-1-1
t
KQ
t
cycle
I
DD
8.5 ns
10 ns
190 mA
10 ns
10 ns
190 mA
11 ns
15 ns
140 mA
12 ns
15 ns
140 mA
相關PDF資料 |
PDF描述 |
|---|---|
| GS84118B-150 | x18 Synchronous SRAM |
| GS84118B-166 | x18 Synchronous SRAM |
| GS84118T-100 | x18 Synchronous SRAM |
| GS84118T-133 | x18 Synchronous SRAM |
| GS84118T-150 | x18 Synchronous SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| GS84118B-150 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x18 Synchronous SRAM |
| GS84118B-150I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18 Sync Cache Tag |
| GS84118B-166 | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18 Sync Cache Tag |
| GS84118B-166I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18 Sync Cache Tag |
| GS84118I-133I | 制造商:GSI 制造商全稱:GSI Technology 功能描述:256K x 18 Sync Cache Tag |
發(fā)布緊急采購，3分鐘左右您將得到回復。